The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

An electronic device may include components that are formed using microelectromechanical systems (MEMS) technology. A MEMS device may include a MEMS structure bonded to a semiconductor substrate. The MEMS structure may be formed from a silicon substrate having a cavity and a moveable member suspended over the cavity and free to oscillate within the cavity. The semiconductor substrate may be a complementary metal-oxide semiconductor substrate having circuitry such as sensing electrodes. The sensing electrodes may be used to gather signals that are produced by movement of the suspended member. One or more of the electrodes on the semiconductor substrate may be covered by a dielectric film to prevent electrical shorts between adjacent electrodes on the semiconductor substrate.

An antenna having radio-frequency (RF) resonators and methods for fabricating the same are described. In one embodiment, the antenna comprises a physical antenna aperture having an array of antenna elements, where the array of antenna elements includes a plurality of radio-frequency (RF) resonators, with each RF resonator of the plurality of RF resonators having an RF radiating element with a microelectromchanical systems (MEMS) device.

A structure for preventing charge induced leakage of a semiconductor device includes a shield separated from a first interconnect by at least a first lateral spacing and separated from a second interconnect by at least a second lateral spacing. The first interconnect is connected to a first junction and the second interconnect is connected to a second junction. A shield bias is connected to the shield to terminate an electromagnetic field on the shield. The shield between the first and second lateral spacings has a minimum width to substantially prevent formation of a conductive channel between the first and second junctions. The shield may be formed over a portion of the first junction and over a portion of the second junction to substantially prevent formation of another conductive channel between the first and second junctions at a location that does not have the first and second lateral spacings.

In a method for producing a component, a first layer composite is first produced, comprising a structured layer and a trench filled with an insulating material. The structured layer is electrically conductive at least in a first region. The trench filled with an insulating material extends outwards from a first surface of the structured layer and is arranged in the first region of the structured layer. The first surface of the structured layer faces a first surface of the first layer composite. The method additionally has the step of producing a second layer composite, which has a first depression in a first surface of the second layer composite, and the step of connecting the first layer composite to the second layer composite. The first surface of the first layer composite adjoins the first surface of the second layer composite at least in some regions, said filled trench being arranged within the lateral position of the first depression. After the first layer composite has been connected to the second layer composite, the thickness of the first layer composite from a second surface of the first layer composite to the depth of the filled trench is reduced. The second surface of the first layer composite lies opposite the first surface of the first layer composite. The method further has the step of producing an active structure in the structured layer, said active structure comprising two second regions which are arranged in the first region of the structured layer and which are mechanically connected to each other in a rigid manner but are electrically insulated from each other by means of the filled trench.

This invention provides a MEMS device, including: a mass structure having at least one anchor; at least one flexible structure connected with the mass structure at the at least one anchor; a plurality of top electrodes located above the mass structure and forming a top capacitor circuit with the mass structure; and a plurality of bottom electrodes located under the mass structure and forming a bottom capacitor circuit with the mass structure. The projections of the plural top electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor, and the projections of the plural bottom electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor. This invention also provides a MEMS compensation structure.

A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.

A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y)-based layer.

A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.

Embodiments of a packaged electronic device and method of fabricating such a device are provided, where the packaged electronic device includes: a pressure sensor die having a diaphragm on a front side; an encapsulant material that encapsulates the pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material; an interconnect structure formed over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; and a cap attached to an outer dielectric layer of the interconnect structure, the cap having a vent hole generally aligned with the opening through the interconnect structure.