Patent classifications
B81B7/0074
ELECTRONIC SYSTEM, AS WELL AS MANUFACTURING METHOD, AND DEVICE FOR MANUFACTURING AN ELECTRONIC SYSTEM
An electronic system having a carrier, at least one radio chip mounted on the carrier, a spacer element, which is mounted on the radio chip and features a material having a predefined permittivity number, and at least one electronic component mounted on the radio chip.
Device with vertically integrated sensors and method of fabrication
A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.
INTEGRATED SENSOR DEVICE
A description is given of a sensor device and a method for producing same. According to one example implementation, the sensor device includes a chip carrier, a semiconductor chip mounted on the chip carrier, and electrical connections between connection pads of the semiconductor chip and corresponding connection pads of the chip carrier. The sensor device further includes a sensor chip arranged on the semiconductor chip and having a sensor element. The sensor chip has trenches that mechanically decouple the sensor element from the rest of the sensor chip. The chip package forms a mold compound that at least partially encapsulates the semiconductor chip and the electrical connections and has an opening in the region of the sensor element so that the sensor element can interact with a medium surrounding the sensor device. The mold compound covers the semiconductor chip except for the sensor chip.
SENSOR PACKAGE AND SENSING MODULE THEREOF
A sensing module of a sensor package includes a substrate and a sensor. The substrate includes an insulating layer, an integrated circuit (IC), a plurality of first circuits, and a plurality of second circuits. The IC is embedded in the insulating layer and includes a plurality of first contacts and a plurality of second contacts. The first circuits are respectively connected to the first contacts, and a part of each of the first circuits is exposed from the first surface of the insulating layer and is defined as a connection pad. The second circuits are respectively connected to the second contacts, and a part of each of the second circuits is exposed from the second surface of the insulating layer and is defined as a soldering pad. The sensor is disposed on the first surface of the insulating layer and is electrically coupled to the first circuits.
Semiconductor package device and method for manufacturing the same
A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, a first dielectric layer, and a first hole. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface. The first dielectric layer is disposed on the second surface and has a third surface away from the substrate. The first hole extends from the first dielectric layer and the substrate. The first hole is substantially aligned with the first electronic component.
HIGH RELIABILITY SENSOR
An electronic device includes first and second semiconductor dies, the first semiconductor die having: a side extending in a first plane of orthogonal first and second directions; a sensor circuit along the side; and a conductive terminal extending outward from the side along an orthogonal third direction, and the second semiconductor die bonded to the first semiconductor die and having: a bottom side; a lateral side; and an insulation layer, the bottom side spaced apart from and facing the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die spaced apart from the conductive terminal along the first direction, the insulation layer extending along the lateral side of the second semiconductor die, and the insulation layer spaced apart from and facing the conductive terminal along the first direction.
Multiple bond via arrays of different wire heights on a same substrate
Apparatuses relating generally to a substrate are disclosed. In such an apparatus, first wire bond wires (first wires) extend from a surface of the substrate. Second wire bond wires (second wires) extend from the surface of the substrate. The first wires and the second wires are external to the substrate. The first wires are disposed at least partially within the second wires. The first wires are of a first height. The second wires are of a second height greater than the first height for coupling of at least one electronic component to the first wires at least partially disposed within the second wires.
MICROELECTRONIC PACKAGES HAVING SPLIT GYROSCOPE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF
Methods for fabricating microelectronic packages and microelectronic packages having split gyroscope structures are provided. In one embodiment, the microelectronic package includes a first Microelectromechanical Systems (MEMS) die having a first MEMS gyroscope structure thereon. The microelectronic package further includes a second MEMS die, which has a second MEMS gyroscope structure thereon and which is positioned in a stacked relationship with the first MEMS die. The first and second MEMS gyroscope structures overlap as taken along a first axis orthogonal to a principal axis of the first MEMS die.
MEMS-CMOS-MEMS PLATFORM
A package combining a MEMS substrate, a CMOS substrate and another MEMS substrate in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first MEMS substrate and a CMOS substrate with a first surface and a second surface and where the first MEMS substrate is attached to the first surface of the CMOS substrate. The package further includes a second MEMS substrate with a first surface and a second surface, where the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate. The first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are provided with electrical inter-connects.
Low stress compact device packages
Various low stress compact device packages are disclosed herein. An integrated device package can include a first integrated device die and a second integrated device die. An interposer can be disposed between the first integrated device die and the second integrated device die such that the first integrated device die is mounted to and electrically coupled to a first side of the interposer and the second integrated device die is mounted to and electrically coupled to a second side of the interposer. The first side can be opposite the second side. The interposer can comprise a hole through at least the second side of the interposer. A portion of the second integrated device die can extend into the hole.