Patent classifications
B81B2201/0214
Semiconductor Device and Method of Making a MEMS Semiconductor Package
A semiconductor device includes a substrate. A first semiconductor die including a microelectromechanical system (MEMS) is disposed over the substrate. A lid is disposed on the substrate around the first semiconductor die. A first encapsulant is deposited over the substrate and lid. A second encapsulant is deposited into the lid.
Computation devices and artificial neurons based on nanoelectromechanical systems
Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.
Method of making a multi-electrode structure usable in molecular sensing devices
A molecular sensor includes a substrate defining a substrate plane, and a plurality of pairs of electrode sheets above or below the substrate at an angle to the substrate plane. The molecular sensor further includes a plurality of inner dielectric sheets between each electrode sheet in each pair of electrode sheets of the plurality of pairs, and an outer dielectric sheet between each pair of electrode sheets of the plurality of pairs.
CMOS-MEMS-CMOS platform
A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.
Semiconductor manufacturing method and structure thereof
A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
FET based sensory systems
This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.
ELECTRONIC COMPONENT WITH A COMPONENT HOUSING
In an electronic component with a component housing and an integrated circuit with sensor function which is accommodated in a plastic electronic housing, wherein the component housing has a cutaway in the region of the circuit with sensor function so that the integrated circuit can perform its function as a sensor through the cutaways, the component housing lies flush with the edge of the cutaway on the electronic housing and is joined in sealing manner with an adhesive bond to the electronic housing. The component housing has an approximately vertical section on the edge of the cutaways, which section extends along the side of the electronic housing. A horizontal section is also present and projects horizontally over the electronic housing.
Atomic Layer Deposition Layer for a Microelectromechanical system (MEMS) Device
System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).
Integrated Capacitive Humidity Sensor
A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
Aircraft air contaminant analyzer and method of use
Disclosed are methods for determining and classifying aircraft air contaminants comprising one or more of: turbine engine oil, hydraulic fluid and deicing fluid using contaminant analyzers comprising a contaminant collector comprising a membrane and a heater vaporizing the contaminants; a gravimetric sensor generating a response when contaminant mass is added to or removed from the sensor, the sensor receiving contaminants desorbed from the heated membrane; a frequency measurement device, measuring the response generated by the sensor as the contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; a processor executing the program, the program including a module classifying contaminants by type, and a module using the data for comparison with magnitude of response generated by the sensor to calculate contaminant concentration; and, a pump, generating flow of air through the collector before and after the membrane is heated.