A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

A pressure sensor chip includes a third conductive layer, a second insulating layer, a first conductive layer, a first insulating layer, and a second conductive layer stacked in order. The first insulating layer includes first and second cavities communicating externally. The second insulating layer includes third and fourth cavities respectively communicating with the second and first cavities. The first conductive layer includes first and second diaphragms, the second conductive layer includes first and second electrodes, and the third conductive layer includes third and fourth electrodes. The first diaphragm and the first electrode face each other with the cavity interposed therebetween, the second diaphragm and the electrode face each other with the first cavity interposed therebetween, the first diaphragm and the third electrode face each other with the fourth cavity interposed therebetween, and the second diaphragm and the fourth electrode face each other with the fourth cavity interposed therebetween.

In micromechanical pressure sensor device and a corresponding production method, the micromechanical pressure sensor device is provided with a first diaphragm; an adjacent first cavity; a first deformation detection device situated in and/or on the first diaphragm for detecting a deformation of the first diaphragm as a consequence of an applied external pressure change and as a consequence of an internal mechanical deformation of the pressure sensor device; a second diaphragm; an adjacent second cavity; and a second deformation detection device situated in and/or on the second diaphragm for detecting a deformation of the second diaphragm as a consequence of the internal mechanical deformation of the pressure sensor device, where the second diaphragm is developed in such a way that it is not deformable as a consequence of the external pressure change.

A sensor membrane structure is provided. The sensor membrane structure includes a substrate, a first insulating layer, and a device layer. The substrate has a first surface and a second surface that is opposite to the first surface. A cavity is formed on the first surface, an opening is formed on the second surface, and the cavity communicates with the opening. The cavity and the opening penetrate the substrate in a direction that is perpendicular to the first surface. The first insulating layer is disposed on the first surface of the substrate. The device layer is disposed on the first insulating layer. The first insulating layer is disposed for protecting the sensor membrane structure from overetched and remain stable during the etching process, increasing the yield of the sensor membrane structure.

Pressure sensors are configured for accurate, non-position sensitive pressure measurement. They can offer microprocessor-based features for optimized measurement, control, and signaling using precision-calibrated silicon piezoresistive microelectromechanical (MEMS) sensors provisioned within a durable, versatilely mountable housing. Such sensors can be mounted readily in alternate locations, configurations, and/or positions. They can also offer real-time temperature compensation, enable selectable analog outputs (such as 2-wire mA, 3-wire mA, or 3-wire V signals), enable adjustable range or subrange selection, support uni- or bi-directional settings, and allow local (pushbutton) or remote (via dry contacts) zeroing for accuracy.

A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.

A MEMS module includes: a first MEMS element and a second MEMS element each including a movable portion which is a portion of a substrate including a hollow portion formed therein, the movable portion configured to warp in shape according to an air pressure difference between an internal air pressure inside the hollow portion and an external air pressure outside the hollow portion; and an electronic component configured to calculate a change in external air pressure outside the substrate by using an amount of warpage of the movable portion of at least one of the first MEMS element and the second MEMS element, wherein the amount of warpage of the movable portion according to the external air pressure differs between the first MEMS element and the second MEMS element.

The present publication discloses a micromechanical structure including at least one active element, the micromechanical structure comprising a substrate, at least one layer formed on the substrate forming the at least part of the at least one active element, mechanical contact areas through which the micromechanical structure can be connected to other structures like printed circuit boards and like. In accordance with the invention the micromechanical structure includes weakenings like trenches around the mechanical contact areas for eliminating the thermal mismatch between the active element of the micromechanical structure and the other structures.