B81B2207/015

MEMS device

Micro-electro-mechanical system (MEMS) devices are disclosed, including a MEMS device comprising a semiconductor die including integrated circuitry, a structure mounted on the semiconductor die and covering at least a portion of the circuitry, the structure defining a space between the structure and the at least a portion of the circuitry, and a transducer including a membrane, the transducer located outside of the space.

SEMICONDUCTOR DIE WITH SENSOR SECTION LOCATED AT THE EDGE
20220069203 · 2022-03-03 ·

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

MICROMACHINED SUPERCONDUCTING INTERCONNECT IN SILICON
20230391609 · 2023-12-07 ·

A microelectromechanical system (MEMS) device and method of fabrication are provided. The MEMS devices includes a silicon substrate. The silicon substrate includes a top surface. An interconnect is machined from the silicon substrate. The interconnect includes at a spring body that has least two spring arms. Each spring arm includes a first end distal from a center of the interconnect, a second end proximate the center of the interconnect, and a single turn of a constant curvature. Each spring arm is configured to move rotationally in a plane parallel to the top surface of the silicon substrate.

MEMS MICROPHONE PACKAGE

A MEMS microphone package is provided. The MEMS microphone package includes a substrate and a circuit device, the substrate has a conductive structure, and the circuit device has through silicon via structures that are electrically connected to the conductive structure. The MEMS microphone package also includes a sensor disposed on the substrate and having a connecting structure disposed on the bottom of the sensor. The connecting structure is electrically connected to the substrate and the circuit device. The MEMS microphone package further includes a cap covering the circuit device and the sensor and separated from the circuit device and the sensor.

Microelectromechanical component and method for producing same

In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).

MICROFABRICATED ULTRASONIC TRANSDUCER HAVING INDIVIDUAL CELLS WITH ELECTRICALLY ISOLATED ELECTRODE SECTIONS

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Sensor Package and Method of Producing the Sensor Package

A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Method of fabricating semiconductor structure

A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.

MEMS CAPACITOR MICROPHONE
20210227335 · 2021-07-22 · ·

An MEMS capacitor microphone is provided, comprising a first substrate and a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate, wherein a lower electrode forming a capacitor structure with the vibration diaphragm is provided on a side of the first substrate that is adjacent to the vacuum chamber, and an electric field between the vibration diaphragm and the lower electrode is 100-300 V/μm.

Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.