Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.

A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.

A method of applying a die attach material includes forming a wafer stencil by selectively removing on the back side of a wafer including a plurality of semiconductor die having an active top side a predetermined depth to form a recess having an inner circumference while not removing an outer most circumference of the wafer. The recess is filled with a B-stage adhesive material. The wafer is singulated to form a plurality singulated semiconductor die. The singulated semiconductor die is die attached back side down to a package substrate, and then the B-stage adhesive material is cured. The B-stage adhesive material across its full area generally has a minimum thickness of at least 20 m and a maximum thickness range of 6 m.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

The present application discloses a packaging structure and method of an MEMS pressure sensor. The packaging structure of the MEMS pressure sensor includes: a film, forming a sealing chamber with a base, during manufacturing the sealing chamber is internally equipped with a sensing medium and a pressure sensor chip, when the external pressure increases, the film bends towards an inner side of the sealing chamber to cause the sealing chamber to contract and transmit pressure to the pressure sensor chip through the sensing medium. The packaging structure of the present application can avoid the sensing chip from being damaged by excessive contraction of the sealing chamber due to pressure overload, and thus achieves overload protection.

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

A Micro Electro Mechanical systems (MEMS) device includes a solder bump on a substrate, a CMOS-MEMS die comprising a CMOS die and a MEMS die, and stud bumps on the CMOS die. The MEMS die is disposed between the CMOS die and the substrate. The stud bumps and the solder bumps are positioned to provide an electrical connection between the CMOS die and the substrate.

The present application discloses a packaging structure and method of an MEMS pressure sensor. The packaging structure of the MEMS pressure sensor includes: a film, forming a sealing chamber with a base, during manufacturing the sealing chamber is internally equipped with a sensing medium and a pressure sensor chip, when the external pressure increases, the film bends towards an inner side of the sealing chamber to cause the sealing chamber to contract and transmit pressure to the pressure sensor chip through the sensing medium. The packaging structure of the present application can avoid the sensing chip from being damaged by excessive contraction of the sealing chamber due to pressure overload, and thus achieves overload protection.

Embodiments include a microelectronic device package structure having a die on a substrate, where a first side of the die is electrically coupled to the substrate, and a second side of the die is covered with a first material having a first thermal conductivity. A second material is adjacent to a sidewall of the die and adjacent to a sidewall of the first material. The second material has second thermal conductivity, smaller than the first thermal conductivity. The second material may have mechanical and/or underfill properties superior to those of the first material. Together, the two materials may provide a package structure having enhanced thermal and mechanical performance.