A method for producing an at least partially housed semiconductor wafer is provided. This method comprises the steps of providing a semiconductor wafer which has components on its upper face and providing a cover disc, the surface of which at least partially covers the semiconductor wafer. After functionalizing the surface of the cover disc to form a functional layer, the upper face of the semiconductor wafer and the surface of the cover disc are joined together, followed by activating the functional layer using simultaneous chemical bonding of the semiconductor wafer and the cover disc such that the cover disc forms a housing for the semiconductor wafer.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A method of making microstructures having re-entrant or doubly re-entrant topology includes forming a mold defining the negative surface features of the re-entrant or doubly re-entrant topology that is to be formed. In one embodiment, a soft or flowable material is formed on a first substrate and the mold is contacted with the same to form a solid, now positive surface having the re-entrant or doubly re-entrant topology. The mold is then released from the first substrate. The microstructures are secured to a second, different substrate, and the first substrate is removed. Any residual microstructure material located between adjacent microstructures may be removed to form the separate microstructures on the second substrate. The second substrate may be thin and flexible any manipulated into useful or desired shapes having the microstructures on one side thereof.

A method for bonding at least three substrates to form a substrate stack, wherein the substrate stack has at least one lowermost substrate a middle substrate, and an upper substrate. The method includes the following steps: aligning the middle substrate to the lowermost substrate and bonding the middle substrate to the lowermost substrate, then aligning the upper substrate and bonding the upper substrate to the middle substrate, wherein the upper substrate is aligned to the lowermost substrate.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

A method for producing an at least partially housed semiconductor wafer (16) is provided. This method comprises the steps of providing a semiconductor wafer (16) which has components (28) on its upper face (20) and providing a cover disc (2), the surface (4) of which at least partially covers the semiconductor wafer (16). After functionalizing the surface (4) of the cover disc (2) to form a functional layer (10), the upper face (20) of the semiconductor wafer (16) and the surface (4) of the cover disc (2) are joined together, followed by activating the functional layer (10) using simultaneous chemical bonding of the semiconductor wafer (16) and the cover disc (2) such that the cover disc (2) forms a housing for the semiconductor wafer (16).

A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).