Method for encapsulating a microelectronic device, comprising the following steps: producing a sacrificial portion covering the device; producing a cover covering the sacrificial portion, comprising two superimposed layers of separate materials and having different residual stresses and/or coefficients of thermal expansion; etching, through the cover, of a trench of which the pattern comprises a curve and/or two straight non-parallel segments; etching of the sacrificial portion through the trench; depositing a sealing material on the trench; in which, during the etching of the sacrificial portion, a portion of the cover defined by the trench deforms under the effect of a mechanical stress generated by the residual stresses and/or a thermal expansion of the layers of the cover and increases the dimensions of the trench, this stress being eliminated before the sealing of the trench.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) device in which a slit at a movable mass of the MEMS device has a top notch slit profile. The MEMS device may, for example, be a speaker, an actuator, or the like. The slit extends through the movable mass, from top to bottom, and has a width that is uniform, or substantially uniform, from the bottom of the movable mass to proximate the top of movable mass. Further, in accordance with the top notch slit profile, top corner portions of the MEMS substrate in the slit are notched, such that a width of the slit bulges at the top of the movable mass. The top notch slit profile may, for example, increase the process window for removing an adhesive from the slit while forming the MEMS device.

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

Method for encapsulation of a microelectronic component, including making of a portion of sacrificial material on a front face of a first substrate in which the component is intended to be made, then making of a cover encapsulating the portion of sacrificial material, then making of the component by etching the first substrate from its back face, such that part of the component is arranged to face the portion of sacrificial material and such that the portion of sacrificial material is accessible from a back face of the component, then elimination of the portion of sacrificial material by etching from the back face of the component, then securing of the back face of the component to a second substrate.

A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

A structure and a fabrication method thereof are provided. The method includes the following operations. A device substrate having a first surface and a second surface opposite to each other is received. A carrier substrate having a third surface and a fourth surface opposite to each other is received. An intermediate layer is formed between the third surface of the carrier substrate and the second surface of the device substrate. The second surface of the device substrate is attached to the third surface of the carrier substrate. The device substrate is thinned from the first surface. A device is formed over the first surface of the device substrate. The carrier substrate and the device substrate are patterned from the fourth surface to form a cavity in the carrier substrate, the intermediate layer and the device substrate.

The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.

A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) device in which a slit at a movable mass of the MEMS device has a top notch slit profile. The MEMS device may, for example, be a speaker, an actuator, or the like. The slit extends through the movable mass, from top to bottom, and has a width that is uniform, or substantially uniform, from the bottom of the movable mass to proximate the top of movable mass. Further, in accordance with the top notch slit profile, top corner portions of the MEMS substrate in the slit are notched, such that a width of the slit bulges at the top of the movable mass. The top notch slit profile may, for example, increase the process window for removing an adhesive from the slit while forming the MEMS device.

A method for producing a MEMS mirror array such as can be used, e.g. in photolithography, and a corresponding MEMS mirror array, can reduce issues possibly resulting from environmental influences.