A semiconductor device includes a substrate. A first semiconductor die including a microelectromechanical system (MEMS) is disposed over the substrate. A lid is disposed on the substrate around the first semiconductor die. A first encapsulant is deposited over the substrate and lid. A second encapsulant is deposited into the lid.

Provided are a capacitive transducer that can make a sealing film thickness necessary to seal a gap smaller and can enhance performance such as a wider bandwidth, and a method of manufacturing the capacitive transducer. The capacitive transducer including cells each including a vibration film including a second electrode that is provided with a gap from a first electrode can be manufactured in the following manufacturing method. A convex part is formed on the first electrode, a sacrifice layer having a thickness larger than the thickness of the convex part is formed on the first electrode and the convex part, and a membrane is formed on the sacrifice layer. Further, an etching hole is formed in the membrane at a position above the convex part, the sacrifice layer is etched through the etching hole, and the etching hole is sealed by a sealing layer.

Provided is a sealed cavity structure, including a base; an upper cover fixed to the base in a covering manner and defining a cavity jointly with the base; a leak hole that passes through the upper cover and communicates the cavity with outside; a sealing cover plate attached and fixed to an outer surface of the upper cover and completely covering the leak hole to seal the leak hole; and a sealing cap including a cap wall pressed on a side of the sealing cover plate away from the leak hole and a cap sidewall extending from the cap wall toward a direction close to the upper cover and fixed, in an abutting manner, to the upper cover. A method for manufacturing a sealed cavity structure is further provided. In this technical solution, better sealing reliability can be achieved.

An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.

A vibrator includes a base, a lid, and a functional element that is stored in a cavity formed by the base and the lid, in which the lid is provided with a sealing hole that penetrates through the lid and a sealing member that air-tightly seals the sealing hole, and in which the functional element includes a diffusion object shielding portion having a region of an accommodation opening which overlaps at least part of a region of a first opening of the sealing hole on a surface of the lid on the cavity side in a plan view of the functional element and the lid.

A semiconductor device includes a microelectromechanical system (MEMS) die, a lid, and an integrated circuit die. The lid is over the MEMS die and defines a cavity between the lid and the MEMS die. The integrated circuit die is attached to an inner side of the lid. The integrated circuit die is electrically coupled to the MEMS die.

A vibrational sensor comprises a microelectromechanical (MEMS) microphone having a base and a lid defining an enclosure, a MEMS acoustic pressure sensor within the enclosure, and a port defining an opening through the enclosure and material that is arranged to plug the port of the MEMS microphone. In embodiments, the MEMS microphone further includes an integrated circuit within the enclosure that is electrically connected to the MEMS acoustic pressure sensor. In some embodiments, the integrated circuit is configured to bias and buffer the MEMS acoustic pressure sensor. In these and other embodiments, the integrated circuit includes circuitry for conditioning and processing electrical signals generated by the MEMS acoustic pressure sensor. In embodiments, the material is arranged with respect to the port so as to cause the MEMS acoustical pressure sensor to sense vibrational energy rather than acoustic energy as in a conventional MEMS microphone.

A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.