A method is provided for bonding microelectromechanical components with at least two different pressure element cavities. The method includes forming on the cap wafer or/and on the structure wafer a metal layer that allows the hermetically sealing of one cavity at a first pressure, then hermetically scaling the other cavity at a second pressure.

A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process. The method includes providing a MEMS wafer including a plurality of mutually adjacent units; forming a gas sensing material layer on the MEMS wafer; bonding a structure reinforcing layer and the MEMS wafer through anode bonding; providing an adhesive tape; performing a cutting process to form a gas detection unit; and adhering the gas detection unit on a substrate by the adhesive tape to form a gas detector. The structure reinforcing layer is capable of enhancing the strength of a device and preventing edge collapsing, and hence enhancing the overall yield rate and reducing costs.

The invention relates to a method for producing optical components, wherein a first contact surface is formed by bringing a deformation element into contact with a carrier; and a second contact surface is formed by applying a functional element to the deformation element; said second contact surface at least partially overlapping the first contact surface, so that a deformation zone is formed by the area of the deformation element that lies between the overlapping areas of the two contact surfaces, wherein at least one portion of the deformation zone is heated and deformed in such a way that the functional element is deflected, in particular, shifts and/or tilts, and the functional element is joined with the deformation element during the process step of applying the functional element to the deformation element and/or during the process step of heating and deforming the deformation zone.

A semiconductor apparatus includes a first substrate having a first surface, a semiconductor device, a first flexible connecting member electrically connected to the semiconductor device, a first pad connected to the first flexible connecting member, and a second substrate including a bump and an interconnect. The second substrate is a low-temperature sintered ceramic substrate containing alkali metal ions. The first pad is connected to the interconnect via the bump. The first pad has at least a portion overlapping the semiconductor device in a plan view seen in a direction along a normal to the first surface. The semiconductor apparatus can thus be miniaturized.

Described herein are nanopore devices as well as methods for assembling a nanopore device including one or more nanopores that can be used to detect molecules such as nucleic acids, amino acids (proteins), and the like. Specifically, a nanopore device includes an insulating layer that reduces electrical noise and thereby improves the sensing resolution of the one or more nanopores integrated within the nanopore device.

An environment-resistant module which provides both thermal and vibration isolation for a packaged micromachined or MEMS device is disclosed. A microplatform and a support structure for the microplatform provide the thermal and vibration isolation. The package is both hermetic and vacuum compatible and provides vertical feedthroughs for signal transfer. A micromachined or MEMS device transfer method is also disclosed that can handle a wide variety of individual micromachined or MEMS dies or wafers, in either a hybrid or integrated fashion. The module simultaneously provides both thermal and vibration isolation for the MEMS device using the microplatform and the support structure which may be fabricated from a thin glass wafer that is patterned to create crab-leg shaped suspension tethers or beams.

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula Li.sub.xP.sub.yO.sub.zN.sub.w, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

A physical quantity sensor includes a substrate, a movable section displaceable in a first direction with respect to the substrate, first and second movable electrode sections provided in the movable section, a first fixed electrode section fixed to the substrate and disposed to be opposed to the first movable electrode section in the first direction, a second fixed electrode section fixed to the substrate and disposed to be opposed to the second movable electrode section in the first direction, a restricting section configured to restrict a movable range in the first direction of the movable section, a first wire provided on the substrate and electrically connected to the first fixed electrode section, and a second wire provided on the substrate and electrically connected to the second fixed electrode section. The first wire and the second wire are respectively cross the restricting section in a plan view of the substrate.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.