A sensor device is constructed to maintain a high glass strength to avoid the glass failure at low burst pressure, resulting from the sawing defects located in the critical high stress area of the glass pedestal as one of the materials used for construction of the sensor. This is achieved by forming polished recess structures in the critical high stress areas of the sawing street area. The sensor device is also constructed to have a robust bonding with the die attach material by creating a plurality of micro-posts on the mounting surface of the glass pedestal.

A physical quantity sensor includes a supporting substrate, an acceleration detecting element that is mounted on the supporting substrate, and a sealing substrate that is bonded to the supporting substrate, and seals the acceleration detecting element, in which a notch portion is formed in a portion of a bonded face to the supporting substrate, in the sealing substrate, and a filling material that is configured by a material which is different from a material configuring the sealing substrate, is arranged in the notch portion.

An apparatus may include a first support covered with at least one ALD precursor and/or at least one MLD precursor, and a second support covered with at least one ALD precursor and/or at least one MLD precursor which is/are complementary to the ALD precursor and/or MLD precursor of the first support. The first support is at least partly joined to the second support by an atomic bond between the ALD precursor of the first support and the ALD precursor of the second support or between the MLD precursor of the first support and the MLD precursor of the second support in such a way that an ALD layer or an MLD layer is formed.

A method of manufacturing an electronic device in which a second substrate (functional element) containing silicon and a third substrate (lid body) containing silicon are bonded to a first substrate containing alkali metal ions by anode bonding includes a first process of performing the anode bonding to bond the second substrate to a surface of the first substrate; a second process of removing at least a portion of the surface of the first substrate to which the third substrate is to be bonded by the anode bonding and exposing a bonding surface after the first process; and a third process of performing the anode bonding to bond the third substrate to the bonding surface of the first substrate.

A manufacturing method of a MEMS sensor includes forming a first substrate, wherein the first substrate includes a lower electrode provided at one surface thereof, forming a second substrate, wherein the second substrate includes a first concave-convex portion provided at one surface thereof, first-bonding one surface of the first substrate and one surface of the second substrate to face each other, forming a third substrate, wherein the third substrate includes an upper electrode provided at one surface thereof, second-bonding another surface of the second substrate and one surface of the third substrate to face each other, and forming an electrode line on another surface of the third substrate to be connected to the lower electrode and the upper electrode.

A sensor device is constructed to maintain a high glass strength to avoid the glass failure at low burst pressure, resulting from the sawing defects located in the critical high stress area of the glass pedestal as one of the materials used for construction of the sensor. This is achieved by forming polished recess structures in the critical high stress areas of the sawing street area. The sensor device is also constructed to have a robust bonding with the die attach material by creating a plurality of micro-posts on the mounting surface of the glass pedestal.

This invention relates to a microelectronic device comprising: a first support (1), a second support (2), first respective faces of the first support and second support (1, 2) being arranged opposite, and a sealing layer (4) between said first faces, characterized in that the sealing layer (4) comprises at least one layer of an ionic conductive material of formula Li.sub.xP.sub.yO.sub.zN.sub.w, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.

A physical quantity sensor includes a base substrate; a movable unit which is provided so as to be displaced with respect to the base substrate by facing the base substrate; a first fixed electrode and a second fixed electrode which are disposed on the base substrate by facing the movable unit; and a plurality of protrusion portions which are disposed at a position overlapped with the movable unit in a planar view, on the movable unit side of the base substrate, in which the protrusion portion includes a conductive layer with the same potential as that of the first fixed electrode and the second fixed electrode, and an insulating layer which is provided on a side opposite to the base substrate with respect to the conductive layer.