A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A remetalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the remetalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

A semiconductor package with design features, including an isolation structure for internal components and a flexible electrical connection, that minimizes errors due to environmental temperature, shock, and vibration effects. The semiconductor package may include a base having a first portion surrounded by a second portion. A connector assembly may be attached to the first portion. The connector assembly may extend through an opening in the base. A lid attached may be attached to, at least, the second portion. The attached lid may form a hermetically-sealed cavity defined by an upper surface of the first portion, the connector assembly, and an inner surface of the lid. An elastomer pad may be on the first portion and a sub-assembly may be on the elastomer pad. A flexible electrical connection may be formed between the connector assembly and the sub-assembly.

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

A method for making three dimensional structures using photolithography and an adhesively bondable material is disclosed. A thiol-ene-epoxy (OSTE(−)) material undergoes a first reaction upon partial irradiation in a pattern to become a partially cross-linked polymer network. Non-cross-linked parts are dissolved in a solvent and removed. An initiator is added to activate the cross-linked polymer network so that it becomes adhesive and can then be covalently bound to another object to form an article. The method can be utilized to manufacture an article with a complicated three dimensional shape in an easy way.

An micro electro mechanical sensor comprising: a substrate; and a sensor element movably mounted to a first side of said substrate; wherein a second side of said substrate has a pattern formed in relief thereon. The pattern formed in relief on the second side of the substrate provides a reduced surface area for contact with the die bond layer. The reduced surface area reduces the amount of stress that is transmitted from the die bond layer to the substrate (and hence reduces the amount of transmitted stress reaching the MEMS sensor element). Because the substrate relief pattern provides a certain amount of stress decoupling, the die bond layer does not need to decouple the stress to the same extent as in previous designs. Therefore a thinner die bond layer can be used, which in turn allows the whole package to be slightly thinner.

An integrated package method for MEMS element and ASIC chip includes forming a re-layout layer on a front surface of an ASIC wafer; coating an organic compound layer on the re-layout layer and applying a lithography process to the organic compound layer to from a microcavity array; aligning and bonding an electrode connection pad layer on a front surface of an MEMS element with the microcavity array to form a closed cavity structure; thinning and exposing a silicon substrate on a back surface of the MEMS element to a desired thickness; applying the lithographic process on the MEMS element to expose the electrode connection pad layer and an electrical contact area of the re-layout layer; and manufacturing a metal connection member connected to the electrode connection pad layer and the electrical contact area. An integrated package structure for MEMS element and ASIC chip is also provided.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.

An integrated device package is disclosed. The package can include a carrier and an integrated device die having a front side and a back side. A mounting structure can serve to mount the back side of the integrated device die to the carrier. The mounting structure can comprise a first layer over the carrier and a second element between the back side of the integrated device die and the first layer. The first layer can comprise a first insulating material that adheres to the carrier, and the second element can comprise a second insulating material.

A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.