The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

Provided an air cleaning system, which includes: a first reactor which has a first inlet and a first outlet and in which a channel is formed; a first moisture adsorption filter and a first water-soluble gas pollutant adsorption filter that are provided inside the first reactor and are provided so that a gas passes therethrough sequentially while flowing along the channel from the first inlet to the first outlet; a plurality of first magnetrons that are provided at a lateral portion of the first reactor so as to correspond respectively to the first moisture adsorption filter and the first water-soluble gas pollutant adsorption filter and selectively apply microwaves to the first moisture adsorption filter and the first water-soluble gas pollutant adsorption filter; and a heat exchanger that receives hot air containing a water-soluble gas pollutant and moisture, both of which are desorbed from the first moisture adsorption filter and the first water-soluble gas pollutant adsorption filter and are discharged by the first outlet, condenses the moisture into water, and dissolves and discharges the water-soluble gas pollutant in the condensed water. According to the present invention, the air cleaning system can unify a dehumidifying process and a water-soluble gas pollutant removing process to simplify an air cleaning process, recover and recycle waste heat by introducing microwaves and the heat exchanger so as to contribute to energy saving, and be used semi-permanently without a need to periodically replace a filter.

A device of purifying a fluoride in a semiconductor process waste gas includes a reaction chamber formed in a waste gas treating tank, and a heat pipe disposed in the waste gas treating tank and inserted into the reaction chamber. A water injection pipe is disposed at the outside end of the heat pipe formed at an outside of the waste gas treating tank, a heating rod is disposed in and passes through the heat pipe, a passage is formed between the heating rod and the heat pipe, water is guided and enters into the passage by the water injection pipe, the water in the passage contacts with the heating rod to produce a mist gaseous water at a high temperature, the mist gaseous water is guided and enters into the reaction chamber via the plurality of spit-outs to dissolve the fluoride to be reacted into a hydrogen fluoride, and a dissolving temperature of the mist gaseous water contacting with the fluoride is 3701300 C.

A sorbent in the form of a layered, non-porous perovskite is provided, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. Furthermore, each organic layer can be sandwiched between inorganic layers. Methods for capturing one or more halogens from a gas stream are also provided, wherein the methods can include contacting a gas stream with a sorbent in the form of a layered, non-porous perovskite, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. One or more halogens in the gas stream can react with either alkyne groups or alkene groups found in the organic layer of the sorbent.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A flow-through solid catalyst formed by coating a zeolite material on a metal or ceramic solid substrate. In some embodiments, the solid substrate is formed as flat plates, corrugated plates, or honeycomb blocks.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A device of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process includes: a cover disposed at a top of a reaction chamber formed on a waste gas treatment tank; a waste gas introducing pipe and a heater respectively disposed in the reaction chamber, a waste gas reaction end being formed at the heater in the reaction chamber corresponding to an outlet of the waste gas introducing pipe; a ring-shaped water disk disposed between the cover and the waste gas treatment tank, an inlet pipe located outside of the reaction chamber being formed on the ring-shaped water disk; and a plurality of nozzles spaced apart at a circumferential distance distributed in the reaction chamber.