A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A method for treating a fluorine element-containing exhaust gas including a dilution step of diluting a fluorine element-containing exhaust gas (a) with an inert gas so as to have a fluorine gas (F.sub.2) concentration of 25% by volume or less to prepare a diluted gas (b) and a water absorption step of contacting the diluted gas (b) with water to obtain a treated gas (c).

A system to abate an emission from a first semiconductor process is disclosed. The system includes an abatement apparatus, such as a gas scrubber, to remove hazardous and toxic gas species from the emission. The abatement apparatus may combust the emission to remove these gas species using a fuel and oxidant. The system includes a fuel assembly fluidly coupled to the abatement apparatus which transmits the fuel from at least one source through the abatement apparatus. The fuel assembly may include a supply tank which contains a volume of fuel, a recovery apparatus which recovers and contains a recovery volume of fuel from a second semiconductor process, and a mass flow controller which may transmit fuel from at least one of the supply tank and the recovery apparatus through the abatement apparatus.

A method of controlling power output by a power supply configured to supply power to a plasma torch in a gas treatment system, the plasma torch being configured to treat effluent gas received from at least two processing chambers is disclosed, along with a controller and the gas treatment system. The method comprises: receiving at least one input signal, the at least one input signal comprising an indication of a number of processing chambers currently supplying an effluent gas stream to the plasma torch; and in response to the at least one input signal, controlling the power output by the power supply by outputting a control signal to control a rate of flow of the plasma source gas.

Venturi Scrubbers are used to separate particulate from a large range of fluids. Many provide additional liquid and/or gas to drive the fluid and aid in the removal of particulate. The present invention provides a liquid ring pump through which the fluid to be treated is first passed and then exhausted, with additional work fluid to a Venturi scrubber such that the particulate can be separated from the exhaust fluid.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

An inlet assembly for a an abatement burner includes: an inlet conduit operable to convey an effluent gas stream to be treated from an inlet aperture via a bore to an outlet aperture for treatment; and a lance conduit operable to convey a fuel gas from a gas inlet aperture via a gas bore to a gas outlet aperture positioned within the bore for mixing with the effluent gas stream, a cross-sectional area of the gas bore increasing towards the gas outlet aperture. In this way, the expansion caused by the increasing cross-sectional area of the gas bore enhances the mixing of the fuel gas with the effluent gas stream which provides for improved destruction and removal efficiencies (DRE), which enables the inlet assembly to be operated with reduced quantities of fuel gas, while still maintaining required levels of DRE.

Disclosed is a method for phosphorus absorption by hydration and fluorine recovery for a fume exiting a kiln in a kiln process for the production of phosphoric acid, comprising the following steps: a fume containing P.sub.2O.sub.5 and fluorine exiting a kiln is introduced into a hydration tower, the fume performs heat and mass transfer with the spraying liquid, with most of the phosphoric acid produced being absorbed into the spraying liquid; the phosphoric acid solution falling from the spraying finally enters the acid solution circulating and spraying system; the fume discharged from a fume outlet then passes through a phosphoric acid mist capturing tower and a mist removing and separating tower successively, such that the phosphoric acid mist entrained in the fume exiting the hydration tower is further captured.

A laser gas purifying system is configured to purify emission gas emitted from an ArF excimer laser apparatus using laser gas including xenon gas and to supply the purified gas to the ArF excimer laser apparatus. The laser gas purifying system comprises a xenon trap configured to reduce xenon gas concentration in the emission gas, and a xenon-adding unit configured to add xenon gas to the emission gas passed through the xenon trap.

Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.