Patent classifications
B01J27/224
METHOD OF PRODUCING SUPPORTED PALLADIUM CATALYST, AND SUPPORTED PALLADIUM CATALYST
A method of producing a supported palladium catalyst includes the steps of: oxidizing a palladium compound by heating; dissolving the palladium compound after the heating in a solvent to prepare a palladium compound solution; and bringing the palladium compound solution into contact with a carrier.
CERAMIC-SUPPORTED PALLADIUM CATALYST
A ceramic-supported palladium catalyst includes: palladium serving as an active component; and a ceramics carrier for supporting the palladium. In the ceramics carrier, a content ratio of aluminum oxide is from 15 mass % to 45 mass %, a content ratio of silicon oxide is from 40 mass % to 60 mass %, and a content ratio of magnesium oxide is from 5 mass % to 30 mass %.
Exhaust purification catalyst
The present invention provides an exhaust gas purification catalyst in which platinum group metal migration from a catalyst layer to a base material during high temperature duration is suppressed. The exhaust gas purification catalyst disclosed herein includes a base material, a catalyst layer, and an intermediate layer arranged between the base material and the catalyst layer. The base material contains SiC. The catalyst layer contains a platinum group metal as a catalyst component. The intermediate layer contains substantially no platinum group metal. A product of a thickness of the intermediate layer (m) and a specific surface area (m.sup.2/g) of the intermediate layer is 1100 or more.
Exhaust purification catalyst
The present invention provides an exhaust gas purification catalyst in which platinum group metal migration from a catalyst layer to a base material during high temperature duration is suppressed. The exhaust gas purification catalyst disclosed herein includes a base material, a catalyst layer, and an intermediate layer arranged between the base material and the catalyst layer. The base material contains SiC. The catalyst layer contains a platinum group metal as a catalyst component. The intermediate layer contains substantially no platinum group metal. A product of a thickness of the intermediate layer (m) and a specific surface area (m.sup.2/g) of the intermediate layer is 1100 or more.
SYSTEM AND METHOD FOR OPERATING A THERMAL REACTOR
The method can include receiving a baseline signal curve, operating a thermal reactor, measuring a signal, optionally determining a state (e.g., state of health) of the thermal reactor, and controlling the thermal reactor based on the signal. The method can include receiving (e.g., determining, measuring, etc.) a resistance-temperature and/or resistance-time curve; operating a thermal reactor comprising resistively heating a porous catalytic element; measuring an electrical signal (e.g., resistance, current, voltage, etc.) of the thermal reactor; optionally inferring a temperature of the thermal reactor based on the electrical signal and the resistance-temperature; and controlling the thermal reactor based on the electrical signal. The system can include one or more of a reaction module (e.g., an electrical coupler or electrode and catalytic element, etc.), inlet and outlet valves, power source, electrical feedthroughs (e.g., leads, supports, etc.), sensors, and computing system (e.g. controller).
SYSTEM AND METHOD FOR OPERATING A THERMAL REACTOR
The method can include receiving a baseline signal curve, operating a thermal reactor, measuring a signal, optionally determining a state (e.g., state of health) of the thermal reactor, and controlling the thermal reactor based on the signal. The method can include receiving (e.g., determining, measuring, etc.) a resistance-temperature and/or resistance-time curve; operating a thermal reactor comprising resistively heating a porous catalytic element; measuring an electrical signal (e.g., resistance, current, voltage, etc.) of the thermal reactor; optionally inferring a temperature of the thermal reactor based on the electrical signal and the resistance-temperature; and controlling the thermal reactor based on the electrical signal. The system can include one or more of a reaction module (e.g., an electrical coupler or electrode and catalytic element, etc.), inlet and outlet valves, power source, electrical feedthroughs (e.g., leads, supports, etc.), sensors, and computing system (e.g. controller).
Honeycomb structure, electrically heated carrier, and exhaust gas purification device
A honeycomb structure including an electrically conductive honeycomb structure portion, comprising an outer peripheral wall, and partition walls disposed inside the outer peripheral wall and partitioning a plurality of cells forming flow paths from one end surface to the other end surface; and a pair of electrode layers provided on an outer surface of the outer peripheral wall so as to face each other across a central axis of the honeycomb structure portion; wherein a coefficient of linear expansion of the honeycomb structure portion measured according to JIS R1618:2002 when temperature is changed from 40 C. to 300 C. is 4.110.sup.6/ C. or more, and the coefficient of linear expansion of the honeycomb structure portion measured according to JIS R1618:2002 when the temperature is changed from 300 C. to 800 C. is 4.210.sup.6/ C. or more and 4.810.sup.6/ C. or less.
Honeycomb structure, electrically heated carrier, and exhaust gas purification device
A honeycomb structure including an electrically conductive honeycomb structure portion, comprising an outer peripheral wall, and partition walls disposed inside the outer peripheral wall and partitioning a plurality of cells forming flow paths from one end surface to the other end surface; and a pair of electrode layers provided on an outer surface of the outer peripheral wall so as to face each other across a central axis of the honeycomb structure portion; wherein a coefficient of linear expansion of the honeycomb structure portion measured according to JIS R1618:2002 when temperature is changed from 40 C. to 300 C. is 4.110.sup.6/ C. or more, and the coefficient of linear expansion of the honeycomb structure portion measured according to JIS R1618:2002 when the temperature is changed from 300 C. to 800 C. is 4.210.sup.6/ C. or more and 4.810.sup.6/ C. or less.
Catalyst support materials, catalyst supports, catalysts and reaction methods using catalysts
A catalyst having a core comprising a composite (A) of SiC grains and a protective matrix of one or more metal oxides, such as alumina, in voids between the SiC grains, said core having a density >60% of theoretical density, and a catalytically active layer (C) containing, e.g., Ni adhered to the core. A catalyst support comprising a composite of SiC grains and a protective matrix of one or more metal oxides in voids between the SiC grains is also provided, along with a method of fabricating a catalyst core. The catalyst can be used in Fischer-TRopsch synthesis or in steam methane reforming.
Catalyst support materials, catalyst supports, catalysts and reaction methods using catalysts
A catalyst having a core comprising a composite (A) of SiC grains and a protective matrix of one or more metal oxides, such as alumina, in voids between the SiC grains, said core having a density >60% of theoretical density, and a catalytically active layer (C) containing, e.g., Ni adhered to the core. A catalyst support comprising a composite of SiC grains and a protective matrix of one or more metal oxides in voids between the SiC grains is also provided, along with a method of fabricating a catalyst core. The catalyst can be used in Fischer-TRopsch synthesis or in steam methane reforming.