A nickel braze alloy may include less than about 2.0 wt. % aluminum, about 18.0-23.0 wt. % cobalt, about 12.0-15.0 wt. % chromium, about 3.8-4.5 wt. % molybdenum, about 0.8-1.5 wt. % niobium, about 1.8-3.0 wt. % tantalum, less than about 2.0 wt. % titanium, about 2.0-3.5 wt. % tungsten, about 0.8-1.2 wt. % boron, about 0.02-0.10 wt. % carbon, about 0.03-0.06 wt. % zirconium, and a balance of nickel and minor amounts of impurities.

An electrode (10) is presented including a sheath (14) formed of a ductile material, an outer coating (16) including a flux material, and a core (12) including at least one of flux material and alloying material. The ductile material may be an extrudable subset of elements of a desired superalloy material and the alloying material may include elements that complement the ductile material to form a desired superalloy material when the electrode is melted. The outer coating may be formed of a flexible bonding material or it may be segmented (18, 20) to facilitate bending the electrode onto a spool. Any hygroscopic material of the electrode may be included in the core to protect it from exposure to atmospheric moisture.

A method of manufacturing includes depositing a braze filler adjacent to a void between a first component and a second component thus holding the components in position before brazing. The first and second components are heated to melt and flow the braze filler into the void. A braze joint is formed between the first and second components by cooling the braze filler. Depositing the braze filler can include laser cladding the braze filler to the first and/or second components adjacent the void. The method also optionally includes welding the first and second components in position with the braze filler adjacent to the void. The braze filler may be deposited as a powder, cold spray, melted brazed filament, spherical ball or any other suitable form.

This disclosure includes the description of a braze alloy composition. The braze composition contains nickel, about 5% by weight to about 25% by weight germanium; and about 1% by weight to about 4% by weight boron. The composition has an amorphous structure, and is free of silicon.

An active braze alloy composition is described, including nickel; or a combination of nickel and cobalt; about 2% by weight to about 30% by weight germanium; and about 1% by weight to about 5% by weight boron and about 0.5% by weight to about 5% by weight of at least active element. The composition is free of silicon. Braze alloy joints formed of the braze alloy composition, and located in various devices, structures, and machines, are also described. A related method for repairing a crack or other cavity within a metal component, using the braze composition, is further described.

To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-μm equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder≧active metal hydride powder>Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 μm, d50 of 10 to 35 μm, and d90 of 30 to 50 μm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.

Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip.

A solder-coated ball (10A) includes a spherical core containing Ni and P; and a solder layer (12) formed to coat the core (11). A solder-coated ball (10B) further includes a Cu plating layer (13) formed between the core (11) and the solder layer (12). A solder-coated ball (10C) further includes an Ni plating layer (14) formed between the Cu plating layer (13) and the solder layer (12).

Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Cu ball 20. The Cu ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.