B24B37/22

POLISHING PADS WITH IMPROVED PLANARIZATION EFFICIENCY

Embodiments of the disclosure include a polishing pad for planarizing a surface of a substrate during a polishing process. The polishing pad includes a base layer, comprising a first material composition, and a polishing layer disposed over the base layer. The polishing layer includes a second material composition that is exposed at a polishing surface of the polishing pad, wherein the polishing surface is configured to contact the surface of the substrate during the polishing process. The second material composition includes a polishing layer material having a hardness that is greater than 50 on a Shore D scale, a yield point strength, a yield point strength strain, a break point strength, and an elongation at break point strain, wherein a magnitude of a difference between the elongation at break point strain and the yield point strength strain is greater than the magnitude of yield point strength strain when measured at room temperature.

METHOD OF USING POLISHING PAD
20230339068 · 2023-10-26 ·

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves. The method further includes spreading the slurry across a second region, surrounding the first region of the polishing pad at a second rate different from the first rate, wherein the second region includes a plurality of second grooves. The method further includes spreading the slurry across a third region, surrounding the second region of the polishing pad at a third rate less than the first rate and the second rate, wherein the third region includes a plurality of third grooves.

METHOD OF USING POLISHING PAD
20230339068 · 2023-10-26 ·

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves. The method further includes spreading the slurry across a second region, surrounding the first region of the polishing pad at a second rate different from the first rate, wherein the second region includes a plurality of second grooves. The method further includes spreading the slurry across a third region, surrounding the second region of the polishing pad at a third rate less than the first rate and the second rate, wherein the third region includes a plurality of third grooves.

POLISHING PAD AND METHOD FOR MANUFACTURING POLISHED PRODUCT

The present invention relates to a polishing pad including a polishing layer and a cushion layer, wherein a ratio E′.sub.B40/E′.sub.C40 of a storage elastic modulus at 40° C. in dynamic viscoelasticity measurement performed under a bending mode condition with a dry state, a frequency of 10 rad/s, and 20 to 100° C., E′.sub.B40, to a storage elastic modulus at 40° C. in dynamic viscoelasticity measurement performed under a compression mode condition with a dry state, a frequency of 10 rad/s, and 20 to 100° C., E′.sub.C40, is 3.0 or more and 15.0 or less, and a loss factor tan δ in the dynamic viscoelasticity measurement performed under the bending mode condition is 0.10 or more and 0.30 or less in a range of 40° C. or more and 70° C. or less.

POLISHING PAD AND METHOD FOR MANUFACTURING POLISHED PRODUCT

The present invention relates to a polishing pad including a polishing layer and a cushion layer, wherein a ratio E′.sub.B40/E′.sub.C40 of a storage elastic modulus at 40° C. in dynamic viscoelasticity measurement performed under a bending mode condition with a dry state, a frequency of 10 rad/s, and 20 to 100° C., E′.sub.B40, to a storage elastic modulus at 40° C. in dynamic viscoelasticity measurement performed under a compression mode condition with a dry state, a frequency of 10 rad/s, and 20 to 100° C., E′.sub.C40, is 3.0 or more and 15.0 or less, and a loss factor tan δ in the dynamic viscoelasticity measurement performed under the bending mode condition is 0.10 or more and 0.30 or less in a range of 40° C. or more and 70° C. or less.

Window in thin polishing pad

A polishing pad includes a polishing layer stack that has a polishing surface, a bottom surface, and an aperture from the polishing surface to the bottom surface. The polishing layer stack includes a polishing layer that has the polishing surface. A fluid-impermeable layer spans the aperture and the polishing pad. A first adhesive layer of a first adhesive material is in contact with and secures the bottom surface of the polishing layer to the fluid-impermeable layer. The first adhesive layer spans the aperture and the polishing pad. The light-transmitting body is positioned in the aperture and has a lower surface in contact with, is secured to the first adhesive layer, and is spaced apart from a side-wall of the aperture by a gap. An adhesive sealant of a different second material is disposed in and laterally fills the gap.

Window in thin polishing pad

A polishing pad includes a polishing layer stack that has a polishing surface, a bottom surface, and an aperture from the polishing surface to the bottom surface. The polishing layer stack includes a polishing layer that has the polishing surface. A fluid-impermeable layer spans the aperture and the polishing pad. A first adhesive layer of a first adhesive material is in contact with and secures the bottom surface of the polishing layer to the fluid-impermeable layer. The first adhesive layer spans the aperture and the polishing pad. The light-transmitting body is positioned in the aperture and has a lower surface in contact with, is secured to the first adhesive layer, and is spaced apart from a side-wall of the aperture by a gap. An adhesive sealant of a different second material is disposed in and laterally fills the gap.

Hydrophilic and zeta potential tunable chemical mechanical polishing pads

In one implementation, a method of forming a porous polishing pad is provided. The method comprises depositing a plurality of composite layers with a 3D printer to reach a target thickness. Depositing the plurality of composite layers comprises dispensing one or more droplets of a curable resin precursor composition onto a support. Depositing the plurality of composite layers further comprises dispensing one or more droplets of a porosity-forming composition onto the support, wherein at least one component of the porosity-forming composition is removable to form the pores in the porous polishing pad.

POLISHING PAD WITH IMPROVED WETTABILITY AND METHOD FOR PREPARING SAME
20230330806 · 2023-10-19 ·

The present invention discloses a polishing pad comprising a laminate composed of a polishing layer, an adhesive layer, and a cushion layer, wherein the cushion layer has a water absorption rate of 100% or less, and a process for manufacturing the polishing pad.

POLISHING PAD WITH IMPROVED WETTABILITY AND METHOD FOR PREPARING SAME
20230330806 · 2023-10-19 ·

The present invention discloses a polishing pad comprising a laminate composed of a polishing layer, an adhesive layer, and a cushion layer, wherein the cushion layer has a water absorption rate of 100% or less, and a process for manufacturing the polishing pad.