An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

The invention provides a combo MEMS device. The combo MEMS device includes a substrate, a device layer, a cap, and at least two sensor units. The device layer is on the substrate. The cap is on the device layer. At least two sensor units which are adjacent to each other are both formed by the substrate, the device layer, and the cap. The first sensor unit includes a sealed space, and the second sensor unit includes a membrane and a semi-sealed space. The membrane is formed by reducing a thickness of a portion of the device layer. The semi-sealed space is formed between the substrate and the device layer or between the device layer and the cap, to receive an external pressure through an external pressure communication opening. The external pressure communication opening is formed between the substrate and the device layer, or between the device layer and the cap, or between the substrate and the cap.

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor or accelerometer. The system uses Fabry-Perot Interferometer in conjunction with beam collimator, beam splitter, optical waveguide and a photodetector integrated. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electrostatic actuators.

An integrated device package is disclosed. The integrated device package can include a packaging structure defining a cavity. An integrated device die can be disposed at least partially within the cavity. A gel can be disposed within the cavity surrounding the integrated device. A portion of the gel can be disposed between a lower surface of the integrated device die and an upper surface of the packaging structure within the cavity.

According to one embodiment, an electronic device includes a base region, an element portion located on the base region, the element portion including a movable portion, and a protective film overlying the element portion and forming a cavity on an inner side of the protective film. The protective film includes a first protective layer and a second protective layer located on the first protective layer. A hole extends in a direction parallel to a main surface of the base region, and the second protective layer covers the hole.

A capped micromachined device has a movable micromachined structure in a first hermetic chamber and one or more interconnections in a second hermetic chamber that is hermetically isolated from the first hermetic chamber, and a barrier layer on its cap where the cap faces the first hermetic chamber, such that the first hermetic chamber is isolated from outgassing from the cap.

The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

A microelectromechanical acceleration sensor system including a microelectromechanical acceleration sensor element for detecting acceleration values acting on the acceleration sensor element, a sigma-delta analog-to-digital converter for converting the analog output signals of the acceleration sensor element into digital output signals, and a first signal generator element and a second signal generator element. The first signal generator element is connected between the acceleration sensor element and the analog-to-digital converter and being configured to apply a predetermined signal value to the output signals of the acceleration sensor element. The signal value of the first signal generator element corresponding to an acceleration value that is greater than the average gravity acceleration, and the second signal generator element being connected in a signal processing direction downstream from the analog-to-digital converter and being configured to correct the digital output signals of the analog-to-digital converter by the signal value of the first signal generator element.