Adjusting of calibration parameters for a sensor. The adjusted calibration parameters may be used to correct the raw data of the sensor. It is provided to calculate new calibration parameters only when accuracy of the calibration parameters currently available is no longer adequate, and suitable measurement data are available for a recalibration of the sensor. Otherwise, the components necessary for calibrating the sensor data may be deactivated in order to reduce energy consumption.

A method is provided for checking a sensor value of a MEMS sensor. In the process, an output signal of the MEMS sensor is detected and the sensor value is ascertained as a function of the output signal. In addition, frequency components of the output signal are examined and a determination is made as to whether the ascertained sensor value is reliable or unreliable as a function of the examination of the frequency components. If the sensor value is determined to be unreliable, the sensor value is discarded or provided with a lower weighting, or a warning it output relating to the unreliability of the sensor value or an item of information about the unreliability of the sensor value is stored.

A MEMS device includes a first MEMS sensor associated with a first spatial plane and a second MEMS sensor is associated with a spatial second plane not co-planar with the first spatial plane, wherein the first MEMS sensor is configured to provide a first interrupt and a first data in response to a physical perturbation, wherein the second MEMS sensor is configured to provide a second interrupt and second data in response to the physical perturbation, and a controller configured to receive the first interrupt at a first time and the second interrupt at a second time different from the first time, wherein the controller is configured to determine a latency between the first time and the second time, and wherein the controller is configured to determine motion data in response to the first data, to the second data, and to the latency.

The present invention discloses a three-axis accelerometer. The three-axis accelerometer comprises: a substrate; at least one anchor block fixedly disposed on the substrate; a first X-axis electrode, a second X-axis electrode, a first Y-axis electrode, a second Y-axis electrode, a first Z-axis electrode and a second Z-axis electrode all fixedly disposed on the substrate; a framework suspended above the substrate and comprising a first beam column, a second beam column disposed opposite to the first beam column and at least one connecting beam connecting the first beam column and the second beam column; a proof mass suspended above the substrate; and at least one elastic connection component configured to elastically connect to the at least anchor block, the connecting beam, and the proof mass. The three-axis accelerometer can realize high-precision acceleration detection on three axes with only one proof mass, and in particular, can provide a fully differential detection signal for the Z axis, thereby greatly improving detection precision.

A semiconductor package with design features, including an isolation structure for internal components and a flexible electrical connection, that minimizes errors due to environmental temperature, shock, and vibration effects. The semiconductor package may include a base having a first portion surrounded by a second portion. A connector assembly may be attached to the first portion. The connector assembly may extend through an opening in the base. A lid attached may be attached to, at least, the second portion. The attached lid may form a hermetically-sealed cavity defined by an upper surface of the first portion, the connector assembly, and an inner surface of the lid. An elastomer pad may be on the first portion and a sub-assembly may be on the elastomer pad. A flexible electrical connection may be formed between the connector assembly and the sub-assembly.

A sensor includes a movable element adapted for rotational motion about a rotational axis due to acceleration along an axis perpendicular to a surface of a substrate. The movable element includes first and second ends, a first section having a first length between the rotational axis and the first end, and a second section having a second length between the rotational axis and the second end that is less than the first length. A motion stop extends from the second end of the second section. The first end of the first section includes a geometric stop region for contacting the surface of the substrate at a first distance away from the rotational axis. The motion stop for contacting the surface of the substrate at a second distance away from the rotational axis. The first and second distances facilitate symmetric stop performance between the geometric stop region and the motion stop.

According to one embodiment, a sensor includes a base body, a first supporter fixed to the base body, and a first movable part separated from the base body. The first movable part includes a first movable base part supported by the first supporter, a second movable base part connected with the first movable base part, and a first movable beam. The first movable beam includes a first beam, a first movable conductive part, and a first connection region. The first beam includes a first beam portion, a second beam portion, and a third beam portion between the first beam portion and the second beam portion. The first beam portion is connected with the first movable base part. The second beam portion is connected with the second movable base part. The first connection region connects the third beam portion and the first movable conductive part.

Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.

A combined MicroElectroMechanical structure (MEMS) includes a first piezoelectric membrane having one or more first electrodes, the first piezoelectric membrane being affixed between a first holder and a second holder; and a second piezoelectric membrane having an inertial mass and one or more second electrodes, the second piezoelectric membrane being affixed between the second holder and a third holder.

Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, for solving the problem that a viscous force is likely to be generated when a smooth surface of the silicon wafer approaches another film layer. The method includes: depositing a porous oxide film layer on a surface of the first silicon planar layer that has been subjected to planar planarization, and then etching the porous oxide film layer by XeF.sub.2 vapor etching, during which XeF.sub.2 gas passes through the porous oxide film layer to etch the first silicon planar layer in an irregular way. Therefore, the first silicon planar layer has a greater surface roughness. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, improving the sensitivity of the MEMS device and reducing the probability of out-of-work MEMS devices.