An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

A driving circuit for controlling a MEMS oscillator includes a digital conversion stage to acquire a differential sensing signal indicative of a displacement of a movable mass of the MEMS oscillator, and to convert the differential sensing signal of analog type into a digital differential signal of digital type. Processing circuitry is configured to generate a digital control signal of digital type as a function of the comparison between the digital differential signal and a differential reference signal indicative of a target amplitude of oscillation of the movable mass which causes the resonance of the MEMS oscillator. An analog conversion stage includes a ΣΔ DAC and is configured to convert the digital control signal into a PDM control signal of analog type. A filtering stage of low-pass type, by filtering the PDM control signal, generates a control signal for controlling the amplitude of oscillation of the movable mass.

A method of operating a mechanical switching device is disclosed. The switching device includes a housing, an assembly disposed in the housing, and a body. The assembly is thermally deformable and comprises a beam held in two different places by two arms secured to edges of the housing. The beam is remote from the body in a first configuration and in contact with and immobilized by the body in a second configuration. The assembly has the first configuration at a first temperature and the second configuration when one of the arms has a second temperature different from the first temperature. The method includes exposing an arm of the assembly to the second temperature, and releasing the beam using a release mechanism. The release mechanism includes a pointed element comprising a pointed region directed towards the body. The pointed element limits an open crater in a concave part of a projection.

Methods for fabricating MEMS tuning fork gyroscope sensor system using silicon wafers. This provides the possibly to avoid glass. The sense plates can be formed in a device layer of a silicon on insulator (SOI) wafer or in a deposited polysilicon layer in a few examples.

A sensor system including a plurality of individual and separate sensor elements. Each of the individual sensor elements is independently functional. The individual sensor elements of the sensor system being formed in one piece from parts of a wafer or a vertically integrated wafer stack. The sensor system including at least one separation structure, in particular a scribe line, between the individual and separate sensor elements.

A microelectromechanical system (MEMS) sensor package includes a laminate that provides physical support and electrical connection to a MEMS sensor. A resin layer is embedded within an opening of the laminate and a MEMS support layer is embedded within the opening by the resin layer. A MEMS structure of the MEMS sensor is located on the upper surface of the MEMS support layer.

The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

The present invention relates to a method and an apparatus for detecting a failure of a sensor device during operation of the sensor device. A test signal is generated in a first frequency band that is above a signal frequency band of the sensor device and fed into a sensor element of the sensor device. A set of samples is obtained, and a magnitude value is derived from said at least two consecutive samples at the first frequency band. The magnitude value is compared to a magnitude threshold value that defines a minimum for the magnitude value and if the magnitude value is below the magnitude threshold value, it is determined that an error has occurred in the sensor device.