Patent classifications
B81B2201/025
Microelectromechanical system (MEMS) on application specific integrated circuit (ASIC)
In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.
MICRO-ELECTRO-MECHANICAL DEVICE HAVING TWO BURIED CAVITIES AND MANUFACTURING PROCESS THEREOF
A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
MEMS DEVICE WITH CAPACITANCE ENHANCEMENT ON QUADRATURE COMPENSATION ELECTRODE
A MEMS device includes a mass system capable of undergoing oscillatory drive motion along a drive axis and oscillatory sense motion along a sense axis perpendicular to the drive axis. A quadrature correction unit includes a fixed electrode and a movable electrode coupled to the movable mass system, each being lengthwise oriented along the drive axis. The movable electrode is spaced apart from the fixed electrode by a gap having an initial width. At least one of the fixed and movable electrodes includes an extrusion region extending toward the other of the fixed and movable electrodes. The movable electrode undergoes oscillatory motion with the mass system such that the extrusion region is periodically spaced apart from the other of the fixed and movable electrodes by a gap exhibiting a second width that is less than the first width thereby enabling capacitance enhancement between the electrodes.
MEMS SENSOR DEVICE HAVING INTEGRATED MULTIPLE STIMULUS SENSING
A sensor device comprises a device structure and a cap coupled with the device structure to produce a cavity in which components of the sensor device are located. The device structure includes a substrate and a movable element spaced apart from a surface of the substrate. A port extends through the substrate underlying the movable element. A sense element is spaced apart from the movable element and is displaced away from the port. The movable element and the sense element form an inertial sensor to sense a motion stimulus as movement of the movable element relative to the sense element. An additional sense element together with a diaphragm spans across the port. The movable element and the additional sense element form a pressure sensor for sensing a pressure stimulus from an external environment as movement of the additional sense element together with the diaphragm relative to the movable element.
Angular velocity sensor for suppressing fluctuation of detection sensitivity
An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (1), that is, an inertial force sensor includes ceramic substrate (6), lower lid (4) adhering to ceramic substrate (6) with adhesives (11a and 11b) (first adhesives), and sensor element (2) adhering to lower lid (4) with adhesives (10a and 10b) (second adhesives). The elastic moduli of adhesives (11a and 11b) are smaller than those of adhesives (10a and 10b).
Magnetic inertial sensor and method for operating the same
An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.
VARIOUS STRESS FREE SENSOR PACKAGES USING WAFER LEVEL SUPPORTING DIE AND AIR GAP TECHNIQUE
Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.
INTEGRATING DIVERSE SENSORS IN A SINGLE SEMICONDUCTOR DEVICE
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
Method and structure of three dimensional CMOS transistors with hybrid crystal orientations
A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.
METHOD FOR MANUFACTURING A MEMS ELEMENT
A method for manufacturing a MEMS element, including the following: forming a least one stationary weight element and at least one moving weight element in the MEMS element, and positioning at least one fixing element at the stationary weight element and at the moving weight element, the fixing element being formed so as to be able to be severed.