A physical quantity sensor has a first movable section, a second movable section that has a rotational moment, which is generated when acceleration is applied, that is different from the first movable section, a movable section that is supported so as to be able to rock about an axis which is positioned between the first movable section and the second movable section, a first detection electrode which is arranged so as to oppose the first movable section, a second detection electrode which is arranged so as to oppose the second movable section, and a frame-form section which is arranged so as to surround at least a portion of the periphery of the movable section in planar view of the movable section and which has the same potential as the movable section.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Microelectromechanical sensor with an out-of-plane detection has a cross sensitivity in a first direction in the plane with a value of S.sub.T, the sensor comprising a support, a mass suspended from the support by beams stressed by bending, in such a way that the inertial mass is capable of moving with respect to the support about an axis of rotation contained in a plane of the sensor, a stress gauge suspended between the mass and the support. The bending beams have a dimension t.sub.f in the out-of-plane direction and the mass has a dimension t.sub.M in the out-of-plane direction such that t.sub.f=(t.sub.M2l.sub.armS.sub.T). L.sub.arm is the distance between the centre of gravity of the mass and the centre of the bending beams projected onto the first direction.

A mask includes a substrate, a light-reflecting structure, a patterned layer, and a plurality of bumps. The substrate has a first surface and a second surface. The light-reflecting structure is located on the first surface of the substrate. The patterned layer is located on the light-reflecting structure. The bumps are located on the second surface of the substrate. The bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate.

A MEMS sensor that comprises a sensing reference plane, at least one anchor coupled to the sensing reference plane, wherein the sensing reference plane is divided by a first and a second axis forming four quadrants on the sensing reference plane, at least one proof mass coupled to the at least one anchor, wherein one of the at least one proof mass moves under an external excitation, and a pattern of sensing elements on the sensing reference plane to detect motion normal of the at least one proof mass relative to the sensing reference plane, wherein the pattern of sensing elements comprises at least three sensing elements in each of the four quadrants.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

In some embodiments, a micro electro mechanical system (MEMS) includes a proof mass, sense electrodes, sense circuitry, and a frequency matching circuitry. The proof mass is configured to move responsive to stimuli. The sense electrodes are configured to generate a signal responsive to the proof mass moving. The sense circuitry is coupled to the sense electrodes. The sense circuitry is configured to receive the generated signal and further configured to process the generated signal. The frequency matching circuitry is configured to apply a DC voltage to the sense electrodes. The DC voltage is configured to change a stiffness of a spring of the proof mass. According to some embodiments, the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode. According to some embodiments, the sense electrodes are a comb structure.

A micromechanical component is provided, the micromechanical component including a deflection device which is deflectable parallel to a deflection direction, and the micromechanical component including a damping device, a surface of the deflection device facing the damping device being greater than a sectional area of the deflection device disposed perpendicular to the deflection direction and situated in a region of the deflection device that is facing away from the damping device.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.