A method for manufacturing a protective wafer including a frame wafer and an optical window, and to a method for manufacturing a micromechanical device including such a protective wafer having an inclined optical window. Also described are a protective wafer including a frame wafer and an optical window, and a micromechanical device including a MEMS wafer and such a protective wafer, which delimit a cavity, the protective wafer including an inclined optical window.

A manufacturing method for a micromechanical device including an inclined optical window and a corresponding micromechanical device. The method includes: providing a first substrate having front and back sides and a recess; applying a second substrate on the front side, the second substrate being thermally deformable and having a first through hole above the recess which has a smaller lateral extension than the recess; forming a flap area on the second substrate above/below the first through hole which is situated in a first position with respect to the first substrate; thermally deforming the second substrate, the flap area being moved into a second position within the recess which is inclined with respect to the first position and optionally subsided into the recess; removing the flap area from the second substrate; and attaching the optical window on the second substrate above/below the first through hole in the second inclined position.

The method according to the invention is used for producing optical components, in particular covers for encapsulating micro-systems, wherein at least one reinforcing element, which is produced before being arranged, is arranged on a first substrate, as a result of which a stack is produced. This stack is heated after being connected to a second substrate, as a result of which the first substrate is deformed such that at least one region, covered by the reinforcing element, of the first substrate is moved and/or is inclined or the first substrate is brought into contact with the reinforcing element. In an alternative method according to the invention, the reinforcing element is arranged on the second substrate, wherein this stack is then connected to the first substrate. The first substrate is subsequently heated and deformed such that a region of the first substrate is brought into contact with the reinforcing element.

A method for producing a structure including, on a main surface of a substrate, at least one elongated cavity having openings at opposing ends. The method includes providing a substrate having a main surface. On the main surface, a first pair of features are formed that protrude perpendicularly from the main surface. The features have elongated sidewalls and a top surface, are parallel to one another, are separated by a gap having a width s1 and a bottom area, and have a width w1 and a height h1. At least the main surface of the substrate and the first pair of features are brought in contact with a liquid, suitable for making a contact angle of less than 90 with the material of the elongated sidewalls and subsequently the substrate is dried.

The present disclosure provides a displacement amplification structure and a method for controlling displacement. In one aspect, the displacement amplification structure of the present disclosure includes a first beam and a second beam substantially parallel to the first beam, an end of the first beam coupled to a fixture site, and an end of the second beam coupled to a motion actuator; and a motion shutter coupled to an opposing end of the first and second beams. In response to a displacement of the motion actuator along an axis direction of the second beam, the motion shutter displaces a distance along a transversal direction substantially perpendicular to the axis direction.

The present disclosure provides a displacement amplification structure and a method for controlling displacement. In one aspect, the displacement amplification structure of the present disclosure includes a first beam and a second beam substantially parallel to the first beam, an end of the first beam coupled to a fixture site, an end of the second beam coupled to a motion actuator, and a motion shutter coupled to an opposing end of the first and second beams. In response to a displacement of the motion actuator along an axis direction of the second beam, the motion shutter displaces a distance along a transversal direction substantially perpendicular to the axis direction.

A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0 and less than 180, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.

In an embodiment, a method for forming a microfabricated structure includes depositing a first membrane on a substrate, depositing a first isolation layer on the first membrane, depositing a stator layer on the first isolation layer, forming a perforated stator from the stator layer, wherein the first isolation layer is disposed on a first surface of the perforated stator, depositing a second isolation layer on a second surface of the perforated stator and depositing a second membrane on the second isolation layer, including depositing a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first glass layer having a low etch rate, and a second glass layer having a high etch rate embedded in the first glass layer.