B81B2207/092

Top port multi-part surface mount silicon condenser microphone
09693133 · 2017-06-27 · ·

A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a cover, and the MEMS microphone die is substrate-mounted and acoustically coupled to an acoustic port provided in the surface mount package. The substrate and the cover are joined together to form the MEMS microphone, and the substrate and cover cooperate to form an acoustic chamber for the substrate-mounted MEMS microphone die.

Glass wafer assembly

A glass wafer assembly is disclosed. In one aspect, the glass wafer assembly comprises a first glass wafer and a second glass wafer that are bonded by a conductive sealing ring. The conductive sealing ring defines a substantially hermetically sealed cavity between the first glass wafer and the second glass wafer. In another aspect, the first glass wafer and the second glass wafer each comprise a plurality of conductive through glass vias (TGVs). At least one active device is disposed in the substantially hermetically sealed cavity and can be electrically coupled to a conductive TGV in the first glass wafer and a conductive TGV in the second glass wafer to enable flexible electrical routing through the glass wafer assembly without wire bonding and over molding. As a result, it is possible to reduce footprint and height while improving radio frequency (RF) performance of the glass wafer assembly.

Semiconductor Devices with Moving Members and Methods for Making the Same
20170166435 · 2017-06-15 ·

A method for forming a MEMS structure includes forming, on a MEMS substrate, an interconnect structure having conductive lines and a first conductive plug of a semiconductor material, forming an etch stop layer on the interconnect structure, forming a dielectric layer over the etch stop layer, bonding a silicon substrate over the dielectric layer, forming a second and third conductive plugs of the semiconductor material in the silicon substrate, wherein the second conductive plug is configured to be electrically coupled with the first conductive plug and third conductive plug is configured to function as an anti-stiction bump, forming a MEMS device electrically coupled with the second conductive feature, and forming a bonding pad on the silicon substrate and surrounded by the second conductive plug.

Packages and methods for packaging

A three-dimensional printing technique can be used to form a microphone package. The microphone package can include a housing having a first side and a second side opposite the first side. A first electrical lead can be formed on an outer surface on the first side of the housing. A second electrical lead can be formed on an outer surface on the second side of the housing. The first electrical lead and the second electrical lead may be electrically shorted to one another. Further, vertical and horizontal conductors can be monolithically integrated within the housing.

SENSOR COMPONENT HAVING TWO SENSOR FUNCTIONS
20170113924 · 2017-04-27 ·

A sensor component having a MEMS sensor and an ASIC for one sensor function each. A base element, a wall element in the form of a frame and a cover together enclose a cavity of a housing. The MEMS sensor is mounted inside the cavity on the base element of the housing. The ASIC has an active sensor surface and is mounted on or under the cover or is embedded in the cover. Electrical external contacts for the MEMS sensor and ASIC are provided on an external surface of the housing. The cavity has at least one opening or bushing.

Semiconductor devices with moving members and methods for making the same

The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween.

SENSOR PACKAGE AND SENSING MODULE THEREOF
20250109972 · 2025-04-03 ·

A sensing module of a sensor package includes a substrate and a sensor. The substrate includes an insulating layer, an integrated circuit (IC), a plurality of first circuits, and a plurality of second circuits. The IC is embedded in the insulating layer and includes a plurality of first contacts and a plurality of second contacts. The first circuits are respectively connected to the first contacts, and a part of each of the first circuits is exposed from the first surface of the insulating layer and is defined as a connection pad. The second circuits are respectively connected to the second contacts, and a part of each of the second circuits is exposed from the second surface of the insulating layer and is defined as a soldering pad. The sensor is disposed on the first surface of the insulating layer and is electrically coupled to the first circuits.

MEMS swtich with internal conductive path

A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.

SEMICONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Semiconductor device and method of forming microelectromechanical systems (MEMS) package

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system. The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.