A method of forming a semiconductor structure includes forming two or more catalyst nanoparticles from a metal layer disposed over a substrate in two or more openings of a hard mask patterned over the metal layer. The method also includes growing two or more carbon nanotubes using the catalyst nanoparticles, and removing the carbon nanotubes to form two or more nanoscale pores. The two or more nanoscale pores may be circular nanoscale pores having a substantially uniform diameter. The two or more openings in the hard mask may have non-uniform size, and the substantially uniform diameter of the two or more nanopores may be controlled by a size of the carbon nanotubes.

Embodiments of the present technology may allow for improved and more reliable tunneling junctions and methods of fabricating the tunneling junctions. Electrical shorting issues may be reduced by depositing electrodes without a sharp sidewall and corner but instead with a sloping or curved sidewall. Layers deposited on top of the electrode layer may then be able to adequately cover the underlying electrode layer and therefore reduce or prevent shorting. Additionally, two insulating materials may be used as the dielectric layer may reduce the possibility of incomplete coverage and the possibility of flaking. Furthermore, the electrodes may be tapered from the contact area to the junction area to provide a thin electrode where the hole is to be patterned, while the thicker contact area reduces sheet resistance. The electrode may also be patterned to be wider at the contact area and narrower at the junction area.

A method of processing nano- and micro-pores includes washing a substrate and cleaning a surface of the substrate; spin-coating photoresist, exposing the substrate and developing to form the substrate with a pattern; 3. depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core; and the surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles; removing the photoresist, and maintaining dot arrays of the micro-nano metal particles; applying laser irradiation and a strong uniform magnetic field on the substrate, so that the substrate is processed to form processed structures; and after the processed structures being formed into nano-/micro-pores with targeted pore size, shape and depth, stopping the laser irradiation and removing the strong uniform magnetic field.

A method of manufacturing a membrane device comprises: a first step of forming a pillar structure on a part of a Si substrate by etching; a second step of forming a first insulation layer on the Si substrate so as to expose a Si surface of an upper part of the pillar structure; a third step of forming a second insulation layer on the pillar structure and the first insulation layer; and a fourth step of etching the Si substrate from an opposite side of the second insulation layer and etching the pillar structure with the first insulation layer being a mask, to thereby form a membrane, which is a region free of the pillar structure in the second insulation layer.

The disclosed technology generally relates to a method of forming a nanoscale opening in a semiconductor structure, and more particularly to forming a nanoscale opening that can be used for sensing the presence of polymers, e.g., the individual bases of deoxyribonucleic acid (DNA) or ribonucleic acid (RNA). In one aspect, a method of forming a nanopore in a semiconductor fin includes providing a fin structure comprising a bottom layer and a top layer, pattering the top layer to form a pillar, and laterally embedding the pillar in a filler material. The method additionally includes forming an aperture in the filler material by removing the pillar, and forming the nanopore in the bottom layer by etching through the aperture. In another aspect, a semiconductor fin is fabricated using the method.

Methods for manufacturing MEMS structures are provided. The method for manufacturing a microelectromechanical system (MEMS) structure includes etching a MEMS substrate to form a first trench and a second trench and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench. The method for manufacturing a MEMS structure further includes etching the MEMS substrate through the extended second trench to form a second through hole. In addition, a height of the first trench is greater than of a height of the MEMS substrate, and a height of the second trench is smaller than of the height of the MEMS substrate.

A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.

A method for manufacturing a device for ejecting a fluid, comprising the steps of: forming, in a first semiconductor wafer that houses a nozzle of the ejection device, a first structural layer; removing selective portions of the first structural layer to form a first portion of a chamber for containing the fluid; removing, in a second semiconductor wafer that houses an actuator of the ejection device, selective portions of a second structural layer to form a second portion of the chamber; and coupling together the first and second semiconductor wafers so that the first portion directly faces the second portion, thus forming the chamber. The first portion defines a part of volume of the chamber that is larger than a respective part of volume of the chamber defined by the second portion.

A method for forming a film that covers a side wall of a through hole in a substrate having the through hole, the method including, in the following order, the steps of providing a substrate having a through hole that passes therethrough from a first surface to a second surface, which is a surface opposite to the first surface, forming, on the first surface, a lid member that blocks an opening of the through hole open on the first surface, recessing, in a direction away from the first surface, a surface of the lid member that blocks the opening by removing part of the lid member through the opening, and forming a film that covers the side wall of the through hole.

The membrane of a conventional solid-state nanopore device, which is believed to be promising for understanding the structural characteristics of DNA and determining a nucleotide sequence, has been thick, and the accuracy in determining a nucleotide sequence in the DNA chain has been insufficient. A method characterized by forming a membrane by forming a first film on a first substrate having a surface of Si, then forming a hole in the first film in such a manner that the surface of the first substrate is exposed, then forming a second film on the first film and on the surface of the first substrate and then etching the first substrate with a solution which does not remove the second film.