A method includes obtaining an active feature layer having a first surface bearing one or more active feature areas. A first capacitor plate of a first capacitor is formed on an interior surface of a cap. A second capacitor plate of the first capacitor is formed on an exterior surface of the cap. The first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor. The cap is coupled with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer. The cap is bonded with the passive layer substrate.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

Embodiments of the invention include a switching device that includes an electrode, a piezoelectric material coupled to the electrode, and a movable structure (e.g., cantilever, beam) coupled to the piezoelectric material. The movable structure includes a first end coupled to an anchor of a package substrate having organic layers and a second released end positioned within a cavity of the package substrate.

A microelectromechanical system, including a substrate having a major plane of extension. The microelectromechanical system includes a mass structure. The mass structure is formed to be movable relative to the substrate in a vertical direction, perpendicularly to the major plane of extension. The mass structure includes an electrode structure. The substrate includes a counter-electrode structure. The electrode structure and the counter-electrode structure are coupled capacitively. The mass structure has a deformation in a resting state of the microelectromechanical system. The electrode structure and/or the counter-electrode structure are formed as a function of the deformation of the mass structure.

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

A MEMS self-aligned high-and-low comb tooth and manufacturing method thereof, the comb tooth having a lifting structure, the lifting structure generating a displacement in the vertical direction to drive the movement of a movable comb tooth or a fixed comb tooth attached thereto. The manufacturing method thereof adopts a silicon wafer, the lifting structure and the comb tooth are sequentially formed on a mechanical structure layer, the fixed comb tooth and the movable comb tooth are formed with the same etching process, and the stress in the lifting structure displaces the fixed comb tooth and the movable comb tooth in the vertical direction, thus forming the self-aligned high-and-low comb tooth.

A method includes obtaining an active feature layer having a first surface bearing one or more active feature areas. A first capacitor plate of a first capacitor is formed on an interior surface of a cap. A second capacitor plate of the first capacitor is formed on an exterior surface of the cap. The first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor. The cap is coupled with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer. The cap is bonded with the passive layer substrate.

Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.