A probe module includes a circuit board and at least one probe formed on a probe installation surface of the circuit board by a microelectromechanical manufacturing process and including a probe body and a probe tip. The probe body includes first and second end portions and a longitudinal portion having first and second surfaces facing toward opposite first and second directions. The probe tip extends from the probe body toward the first direction and is processed with a gradually narrowing shape by laser cutting. The first and/or second end portion has a supporting seat protruding from the second surface toward the second direction and connected to the probe installation surface, such that the longitudinal portion and the probe tip are suspended above the probe installation surface. The probe has a tiny pinpoint for detecting tiny electronic components, and its manufacturing method is time-saving and high in yield rate.

A sensor is achieved by applying a layer of a mixture that contains polymer and conductive particles over a substrate or first surface, when the mixture has a first viscosity that allows the conductive particles to rearrange within the material. An electric field is applied over the layer, so that a number of the conductive particles are assembled into one or more chain-like conductive pathways with the field and thereafter the viscosity of the layer is changed to a second, higher viscosity, in order to mechanically stabilise the material. The conductivity of the pathway is highly sensitive to the deformations and it can therefore act as deformation sensor. The pathways can be transparent and is thus suited for conductive and resistive touch screens. Other sensors such as strain gauge and vapour sensor can also be achieved.

A semiconductor substrate includes a first semiconductor layer, a first dielectric layer coupled to the first semiconductor layer, and a second semiconductor layer coupled to the first dielectric layer. The second semiconductor layer includes a base portion substantially aligned with the first dielectric layer and a cantilever portion protruding from an end of the first dielectric layer. The cantilever portion includes a tapered surface tapering from a bottom surface of the second semiconductor layer toward a top surface of the second semiconductor layer.

A micro-electromechanical system (MEMS) device and a method of forming the same, the MEMS device includes a composite substrate, a cavity, a piezoelectric stacking structure and a proof mass. The composite substrate includes a first semiconductor layer, a bonding layer and a second semiconductor layer from bottom to top. The cavity is disposed in the composite substrate, and the cavity is extended from the second semiconductor layer into the first semiconductor layer and not penetrated the first semiconductor layer. The piezoelectric stacking structure is disposed on the composite substrate, with the piezoelectric stacking structure having a suspended region over the cavity. The proof mass is disposed in the cavity to connect to the piezoelectric stacking structure.

An integrated circuit (IC) device includes: a first substrate; a dielectric layer disposed over the first substrate; and a second substrate disposed over the dielectric layer. The second substrate includes anchor regions comprising silicon extending upwards from the dielectric layer, and a series of interdigitated fingers extend from inner sidewalls of the anchor regions. The interdigitated fingers extend generally in parallel with one another in a first direction and have respective finger lengths that extend generally in the first direction. A plurality of peaks comprising silicon is disposed on the dielectric layer directly below the respective interdigitated fingers. The series of interdigitated fingers are cantilevered over the plurality of peaks. A first peak is disposed below a base of a finger and has a first height, and a second peak is disposed below a tip of the finger has a second height less than the first height.

An integrated circuit (IC) device includes: a first substrate; a dielectric layer disposed over the first substrate; and a second substrate disposed over the dielectric layer. The second substrate includes anchor regions comprising silicon extending upwards from the dielectric layer, and a series of interdigitated fingers extend from inner sidewalls of the anchor regions. The interdigitated fingers extend generally in parallel with one another in a first direction and have respective finger lengths that extend generally in the first direction. A plurality of peaks comprising silicon is disposed on the dielectric layer directly below the respective interdigitated fingers. The series of interdigitated fingers are cantilevered over the plurality of peaks. A first peak is disposed below a base of a finger and has a first height, and a second peak is disposed below a tip of the finger and has a second height less than the first height.

A method for fabricating a cantilever having a device surface, a tapered surface, and an end region includes providing a semiconductor substrate having a first side and a second side opposite to the first side and etching a predetermined portion of the second side to form a plurality of recesses in the second side. Each of the plurality of recesses comprises an etch termination surface. The method also includes anisotropically etching the etch termination surface to form the tapered surface of the cantilever and etching a predetermined portion of the device surface to release the end region of the cantilever.

A method for manufacturing an electromechanical actuator includes providing a primary stack of layers comprising a monocrystalline layer, providing a secondary stack of layers, and forming, in the etching layer, at least three pads. The method further includes encapsulating the three pads by a first encapsulation layer, assembling the primary stack of layers with the secondary stack of layers, removing the first substrate, and forming a movable electrode in the monocrystalline layer.

In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.