The present invention relates to the fields of physics, material sciences and micro and nano electronics, and concerns a method for producing a rolled-up electrical or electronic component, as can be used for example as a capacitor, or in aerials. The object of the present invention is to provide a low-cost, environmentally friendly and time-saving method for producing a rolled-up electrical or electronic component with many windings. The object is achieved by a method for producing a rolled-up component in which at least two functional and insulating layers, alternately arranged fully or partially over one another, are applied to a substrate with a sacrificial layer, wherein at least the functional or insulating layer that is arranged directly on the sacrificial layer has a perforation, at least on the two sides that are arranged substantially parallel to the rolling direction.

A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.

A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

A MEMS device can include a solid dielectric including a plurality of apertures, the solid dielectric having a first side and a second side. The MEMS device can include a first plurality of electrodes extending completely through a first subset of the plurality of apertures, a second plurality of electrodes extending partially through a second subset of the plurality of apertures, a third plurality of electrodes extending partially into a third subset of the plurality of apertures. The MEMS device can include a first diaphragm coupled to the first plurality and to the third plurality of electrodes, the first diaphragm facing the first side of the solid dielectric. The MEMS device can include a second diaphragm coupled to the first plurality and to the second plurality of electrodes the second diaphragm facing the second side of the solid dielectric.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

Aspects of this disclosure relate to a capacitive micromachined ultrasonic transducer (CMUT) with a contoured electrode. In certain embodiments, the CMUT has a contoured electrode. The electrode may be non-planar to correspond to a deflected shape of the outer plate. A change in distance between the electrode and the plate after deflection may be greater than a minimum threshold across the width of the CMUT.

A device with an out-of-plane electrode includes a device layer positioned above a handle layer, a first electrode defined within the device layer, a cap layer having a first cap layer portion spaced apart from an upper surface of the device layer by a gap, and having an etch stop perimeter defining portion defining a lateral edge of the gap, and an out-of-plane electrode defined within the first cap layer portion by a spacer.

According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.

A method of manufacturing a plurality of neural probes from a silicon wafer in which after neural probes are formed on one side of a silicon wafer, the other side of the silicon wafter is subject to a dicing process that separates and adjusts the thickness of the neural probes.

A capacitive physical quantity sensor includes a first substrate, a movable electrode, a fixed electrode, and a second substrate. An auxiliary electrode is disposed on a portion of the second substrate to face the movable electrode and the auxiliary electrode has a facing area that faces the movable electrode. The facing area in a case where the movable electrode is displaced in one direction is different from the facing area in a case where the movable electrode is displaced in an opposite direction opposite to the one direction. The physical quantity is detected based on a capacitance, which is generated corresponding to the interval between the fixed electrode and the movable electrode, and a capacitance, which is generated corresponding to an interval between the facing area of the movable electrode and the auxiliary electrode.