A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.

A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.

The present invention discloses a micro-electro-mechanical system silicon on insulator (MEMS SOI) pressure sensor and a method for preparing the same. The pressure sensor includes a bulk silicon layer, a buried oxide layer, a substrate, a varistor, a passivation layer, and an electrode layer. The varistor is obtained by means of photolithography and ion implantation on a device layer of an SOI wafer. The passivation layer is SiO.sub.2 formed by means of annealing treatment on the SOI wafer. An annealing atmosphere is one of pure O.sub.2, a gas mixture of O.sub.2/H.sub.2O, a gas mixture of O.sub.2/NO, a gas mixture of O.sub.2/HCl, and a gas mixture of O.sub.2/CHF.sub.3. By means of the annealing treatment, the damage to a surface of the buried oxide layer as a result of over-etching during formation of the varistor by means of photolithography is eliminated and the unstability of the sensor caused by body and interface defects of the passivation layer and trapped charges thereof is resolved. A trench is formed at the buried oxide layer and the bulk silicon layer directly below the varistor, which helps overcome defects as a result of doped impurities entering the buried oxide layer below the varistor, and helps improve the sensitivity of the sensor.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

A method for preparing a flexible electrode is provided. The method comprises sequentially forming a flexible base layer and an intermediate conductive layer on a carrier plate; treating an elastomeric template having an electrode pattern with an acid, followed by transferring and printing the electrode pattern onto the intermediate conductive layer to form an electrode inducing layer; forming a titanium dioxide-polydopamine composite layer in a gap of the electrode inducing layer; forming a platinum electrode layer on the titanium dioxide-polydopamine composite layer; removing the carrier plate. The invention solves the problems of slow formation of a polydopamine film and slow formation of a platinum electrode layer. A flexible electrode is further provided.

A method for producing a micro-pattern on surface of a wire is disclosed. The method includes a step of applying a nanoparticle solution to the wire to form a nanoparticle solution layer on the surface of the wire; and a step of irradiating the nanoparticle solution layer with a Bessel beam laser to induce sintering of nanoparticles, thereby forming a micro-pattern on the surface of the wire. It is possible to form a microelectrode pattern on a level of several to tens of micrometers on the surface of a micro-wire having a diameter on a scale of several tens to several hundreds of micrometers. Since a laser optical system with a long depth of focus is used, a micro-pattern with a uniform thickness can be formed on surface of a wire having a curvature in a simple.

A method of manufacturing a MEMS vibration element having a fixed electrode, a movable electrode, and an elastic supporting unit that elastically supports the movable electrode with respect to the fixed electrode includes: etching a base material having a first thickness to form the fixed electrode and the movable electrode; and etching the base material to form the elastic supporting unit having a second thickness, the second thickness being less than the first thickness.

Disclosed are an implantable flexible neural microelectrode comb, and a preparation method and implantation method therefor. The flexible neural microelectrode comb is mainly composed of a flexible substrate layer (1), a flexible insulation layer (2), and a metal connection wire layer (3) arranged between the flexible substrate layer (1) and the flexible insulation layer (2); the flexible neural microelectrode comb comprises a filament structure (4), a mesh structure (5), a plane structure (6) and a bonding pad area (7) connected in sequence; electrode sites (8) are arranged on the filament structure (4); bonding pads are arranged on the bonding pad area (7); the metal connection wire layer (3) is composed of metal connection wires connecting the electrode sites (8) and the bonding pads; and the flexible insulation layer (2) is not arranged on the surfaces of the electrode sites (8) and the bonding pads. The prepared flexible neural microelectrode comb has a structure gradually changing from a filament to a mesh to a plane structure, thus improving mechanical stability during a deformation process. The mechanical properties of the implantable flexible neural microelectrode comb match brain tissue, the implantation footprint is small, an inflammatory response of the brain is avoided, and electrophysiological signals in the brain can be stably tracked and measured in a multi-site manner for a long time.

A first electrode of a MEMS device can be oriented lengthwise along and parallel to an axis, and can have a first end and a second end. A second electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. A third electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. The first, second, and third electrodes can each be located at least partially within an aperture of a plurality of apertures of a solid dielectric that can surround the second electrode second end and the third electrode first end. The second electrode first end and the third electrode second end can be located outside of the solid dielectric.

A piezoelectric microelectromechanical acoustic transducer, having a semiconductor substrate with a frame portion and a through cavity defined internally by the frame portion; an active membrane, suspended above the through cavity and anchored, at a peripheral portion thereof, to the frame portion of the substrate by an anchorage structure, a plurality of piezoelectric sensing elements carried by a front surface of the active membrane so as to detect mechanical stresses of the active membrane; a passive membrane, suspended above the through cavity, underneath the active membrane, interposed between the through cavity and a rear surface of the active membrane; and a pillar element, which fixedly couples, and is centrally interposed between, the active membrane and the passive membrane. A ventilation hole passes through the entire active membrane, the passive membrane and the pillar element to set the through cavity in fluidic communication with the front surface of the active membrane.