In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method for fabricating a slanted structure on a material layer includes forming a mask layer on the material layer, and implanting ions into a plurality of regions of the material layer at a slant angle greater than zero using an ion beam and the mask layer. The slant angle is measured with respect to a surface normal of the material layer. Implanting the ions into the plurality of regions of the material layer changes a refractive index or an etch rate of the plurality of regions of the material layer. In some embodiments, the method further includes wet-etching the material layer using an etchant to remove materials in the plurality of regions of the material layer. In some embodiments, the method includes either simultaneous or post-implantation etching of modified material through a dry etching process using reactive etchants in feed gas.

The purpose of the present invention is to provide a method for manufacturing a three-dimensionally structured member which can be made by a simpler process. The method for manufacturing a three-dimensionally structured member includes shaping a flat plate-shaped base member to produce a three-dimensionally structured member having a plurality of sections that are different from one another in thickness. The manufacturing method comprises: a mask formation step for forming a mask over the whole of at least one main surface of the base member; a mask removal step for removing a part of the mask; and an etching step for etching an exposed part of the base member, wherein a combination of the mask removal step and the etching step is performed on the mask and the base member that correspond to each of the plurality of sections of the three-dimensionally structured member, in the order from thinnest to the thickest of thicknesses of the three-dimensionally structured members.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

The present invention provides a simple method for ablating a protective thin film on a bulk surface and roughening the underlying bulk. In an embodiment, silicon nitride thin films, which are useful as etch-stop masks in micro- and nano-fabrication, is removed from a silicon wafer's surface using a hand-held “flameless” Tesla-coil lighter. Vias created by a spatially localized electron beam from the lighter allow a practitioner to perform micro- and nano-fabrication without the conventional steps of needing a photoresist and photolithography. Patterning could be achieved with a hard mask or rastering of the spatially confined discharge, offering—with low barriers to rapid use—particular capabilities that might otherwise be out of reach to researchers without access to conventional, instrumentation-intensive micro- and nano-fabrication workflows.

A laser micro-machining process called laser-assisted material phase-change and expulsion (LAMPE) micromachining that includes cutting features in a cutting surface of a piece of material using a pulsed laser with intensity, pulse width and pulse rate set to melt and eject liquid material without vaporizing said material, or, in the case of silicon, create an ejectible silicon oxide. Burrs are removed from the cutting surface by electro-polishing the cutting surface with a dilute acid solution using an electric potential higher than a normal electro-polishing electric potential. A multi-lamina assembly of laser-micro-machined laminates (MALL) may utilize MEMS. In the MALL process, first, the individual layers of a micro-electromechanical system (MEMS) are fabricated using the LAMPE micro-machining process. Next, the fabricated microstructure laminates are stack assembled and bonded to fabricate MEM systems. The MALL MEMS fabrication process enables greater material section and integration, greater design flexibility, low-cost manufacturing, rapid development, and integrated packaging.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes comprises depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.

An inertial sensor according to the present disclosure includes a sensor element having a multilayer structure in which a first substrate, a second substrate, and a sensor substrate are stacked one on top of another. The first substrate includes a substrate body, a first interconnect, an electrode layer, and a silicon member. The first interconnect is provided inside the substrate body. The electrode layer is provided for the substrate body and electrically connected to the first interconnect. The silicon member is provided at an end of the substrate body. The silicon member has, in a cross-sectional view, a curved portion and a linear portion connected to the curved portion. The electrode layer is provided to cover the curved portion and the linear portion.