The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die resides over a top surface of the multilayer redistribution structure. The multilayer redistribution structure includes at least one support pad that is on a bottom surface of the multilayer redistribution structure and vertically aligned with the first thinned die. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

A method for producing a microelectromechanical sensor. The microelectromechanical sensor is produced by connecting a cap wafer to a sensor wafer. The cap wafer has a bonding structure for connecting the cap wafer to the sensor wafer. The sensor wafer has a sensor core having a movable structure. The cap wafer has a stop structure for limiting an excursion of the movable structure. The method includes a first step and a second step following the first step, the stop surface of the stop structure being situated at the level of the original surface of the unprocessed cap wafer.

A method of manufacturing a display apparatus is presented. The method includes sequentially forming a conductive layer and a low reflection layer above a substrate; forming a first low reflection layer including a lower layer having conductivity and an upper layer above the lower layer, a pixel electrode, and a low reflection etching layer above the pixel electrode by patterning the conductive layer and the low reflection layer; forming a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the low reflection etching layer; exposing the pixel electrode by etching at least a part of the low reflection etching layer by using the pixel-defining layer as a mask; forming an intermediate layer above the exposed pixel electrode, the intermediate layer comprising an organic emission layer; and forming an opposite electrode above the intermediate layer.

A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.

A display apparatus includes: a substrate; a pixel electrode above the substrate; a first low reflection layer spaced apart from the pixel electrode at a same layer as the pixel electrode and comprising a lower layer having conductivity and an upper layer above the lower layer; a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the pixel electrode; an intermediate layer above the pixel electrode and comprising an organic emission layer; and an opposite electrode above the intermediate layer.

A micromechanical structure includes a fixing point, a silicon spring, and a movable part. The silicon spring is connected to the fixing point at a first end and to the movable part at a second end. At least one copper circuit trace is situated on the silicon spring and extends at least from the first end to the second end. The copper circuit trace has a layer structure including a plurality of contiguous copper layers.

A micromechanical sensor device and a corresponding manufacturing method. The micromechanical sensor device is equipped with a substrate which includes a diaphragm area, multiple sensor layer areas being formed on the diaphragm area, which have a particular structured sensor layer; and a particular electrode device, via which the sensor layer areas are electrically connectable outside of the diaphragm area, the sensor layer areas being structured in such a way that they have length and width dimensions of a magnitude between 1 and 10 micrometers.

An electromechanical device may include a first substrate, a second substrate, a connector, and a protector. The connector may be formed of a first dielectric material and may be positioned between the first substrate and the second substrate. A first side of the connector may directly contact the first substrate. The protector may be formed of a second dielectric material and may directly contact a second side of the connector.

MEMS structures and methods utilizing a locker film are provided. In an embodiment a locker film is utilized to hold and support a moveable mass region during the release of the moveable mass region from a surrounding substrate. By providing additional support during the release of the moveable mass, the locker film can reduce the amount of undesired movement that can occur during the release of the moveable mass, and preventing undesired etching of the sidewalls of the moveable mass.