A manufacturing method for a Micro-Electro-Mechanical Systems (MEMS) structure includes implementing a surface modification process, to form a transformation layer on the surfaces of the MEMS structure; implementing an anti-stiction coating pre-clean process, to clean the transformation layer on the surfaces towards a particular direction; and implementing an anti-stiction coating process, to coat a monolayer on the surfaces of the MEMS structure.

The present disclosure relates to a MEMS package with a rough metal anti-stiction layer, to improve stiction characteristics, and an associated method of formation. In some embodiments, the MEMS package includes a MEMS IC bonded to a CMOS IC. The CMOS IC has a CMOS substrate and an interconnect structure disposed over the CMOS substrate. The interconnect structure includes a plurality of metal layers disposed within a plurality of dielectric layers. The MEMS IC is bonded to the CMOS IC, enclosing a cavity between the MEMS IC and the CMOS IC and a moveable mass arranged in the cavity. The MEMS package further includes an anti-stiction layer disposed under the moveable mass. The anti-stiction layer is made of metal and has a rough top surface.

The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

A MEMS device is provided that includes a handle layer having a cavity and a suspension structure, a first device layer including a static electrode, a second device layer including a seismic element moveably suspended above the first device layer and a cap layer. The seismic element acts as the moveable electrode or the seismic element is mechanically coupled to move with the moveable electrode. The handle layer, the first device layer, the second device layer and the cap layer, a first electrically insulating layer between the handle layer and the first device layer, and a second electrically insulating layer between the first device layer and the second device layer form an enclosure that accommodates the seismic element, the static electrode and the moveable electrode.

The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.

A method for manufacturing a micromechanical component, including: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.

A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.

A microelectromechanical systems (MEMS) structure includes a substrate, an epitaxial polysilicon cap located above the substrate, a first cavity portion defined between the substrate and the epitaxial polysilicon cap, and a first graphene component having at least one graphene surface immediately adjacent to the first cavity portion.

A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.

A manufacturing method for a Micro-Electro-Mechanical Systems (MEMS) structure includes implementing a surface modification process, to form a transformation layer on the surfaces of the MEMS structure; implementing an anti-stiction coating clean process, to clean the transformation layer on the surfaces towards a particular direction; and implementing an anti-stiction coating process, to coat a monolayer on the surfaces of the MEMS structure.