A method of forming a semiconductor device includes following steps. First of all, plural first openings and plural second openings are sequentially formed on a material layer disposed on a substrate, with the second openings across the first openings to form plural overlapped regions. Then, plural patterns arranged in an array arrangement are formed, with each pattern overlapped each overlapped region, respectively. After that, transferring the first openings, the second openings and the patterns to the material layer, to from plural material patterns in an array arrangement. In another embodiment of the present invention, the first openings and the second openings may be replaced by plural first patterns and plural second patterns, while the patterns are replaced by plural openings.

A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

The disclosure describes a soft-matter electronic device having micron-scale features, and methods to fabricate the electronic device. In some embodiments, the device comprises an elastomer mold having microchannels, which are filled with an eutectic alloy to create an electrically conductive element. The microchannels are sealed with a polymer to prevent the alloy from escaping the microchannels. In some embodiments, the alloy is drawn into the microchannels using a micro-transfer printing technique. Additionally, the molds can be created using soft-lithography or other fabrication techniques. The method described herein allows creation of micron-scale circuit features with a line width and spacing that is an order-of-magnitude smaller than those previously demonstrated.

A method for manufacturing an optical microelectromechanical device, includes forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. The method continues with forming, in a second wafer, a chamber delimited by a bottom wall having a through opening, and bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer. The device composite wafer is diced to form an optical microelectromechanical device.

Crosslinkable random copolymers comprising atom transfer radical polymerization (ATRP) initiators and crosslinked copolymer films formed from the copolymers are provided. The random copolymers, which are polymerized from one or more alkyl halide functional inimers and one or more monomers having a crosslinkable functionality, are characterized by pendant ATRP initiating groups and pendant crosslinkable groups.

A method of forming a semiconductor device includes following steps. First of all, plural first openings and plural second openings are sequentially formed on a material layer disposed on a substrate, with the second openings across the first openings to form plural overlapped regions. Then, plural patterns arranged in an array arrangement are formed, with each pattern overlapped each overlapped region, respectively. After that, transferring the first openings, the second openings and the patterns to the material layer, to from plural material patterns in an array arrangement. In another embodiment of the present invention, the first openings and the second openings may be replaced by plural first patterns and plural second patterns, while the patterns are replaced by plural openings.

An integration of silicon carbide (SiC) pressure sensor and a temperature sensor on a single SiC substrate to facilitate the simultaneous measurement of pressure and temperature at temperature, and a method of fabricating the same.

Crosslinkable random copolymers comprising atom transfer radical polymerization (ATRP) initiators and crosslinked copolymer films formed from the copolymers are provided. The random copolymers, which are polymerized from one or more alkyl halide functional inimers and one or more monomers having a crosslinkable functionality, are characterized by pendant ATRP initiating groups and pendant crosslinkable groups.

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.