Embodiments of the invention are directed to Z-scheme photocatalyst for efficient hydrogen generation from water. The Z-scheme photocatalyst can include a hybrid metal that includes a semiconductor material/M1/Cd.sub.xM.sub.1xS material. M1 can be transition metal and M can Zn, Fe, Cu, Sn, Mo, Ag, Pb and Ni.

A catalyst for purification of exhaust gas containing a phosphorus compound includes: a lower catalyst layer containing at least one of noble metal provided on a refractory three-dimensional structure; and an upper catalyst layer at an inflow side of exhaust gas and an upper catalyst layer at an outflow side of exhaust gas provided on a surface of the lower catalyst layer. The upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side have different concentrations of noble metal. The catalyst has an intermediate zone with a length of 3 to 23% of the overall length of the refractory three-dimensional structure provided between the upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side. The intermediate zone starts from a position 10 to 38% from an end face of the catalyst at the inflow side of exhaust gas.

A catalyst for purification of exhaust gas containing a phosphorus compound includes: a lower catalyst layer containing at least one of noble metal provided on a refractory three-dimensional structure; and an upper catalyst layer at an inflow side of exhaust gas and an upper catalyst layer at an outflow side of exhaust gas provided on a surface of the lower catalyst layer. The upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side have different concentrations of noble metal. The catalyst has an intermediate zone with a length of 3 to 23% of the overall length of the refractory three-dimensional structure provided between the upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side. The intermediate zone starts from a position 10 to 38% from an end face of the catalyst at the inflow side of exhaust gas.

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

A diesel oxidation catalyst article is provided, which includes a substrate carrier having a plurality of channels adapted for gas flow and a catalyst composition positioned to contact an exhaust gas passing through each channel. The catalyst composition includes a platinum (Pt) component and a sulfur (S)-containing component impregnated onto a refractory metal oxide support and is effective to abate hydrocarbon and carbon monoxide, as well as oxidize NO to NO.sub.2 in the exhaust gas. Methods of making and using the catalyst article are also provided, as well as emission treatment systems comprising the catalyst article.

A diesel oxidation catalyst article is provided, which includes a substrate carrier having a plurality of channels adapted for gas flow and a catalyst composition positioned to contact an exhaust gas passing through each channel. The catalyst composition includes a platinum (Pt) component and a sulfur (S)-containing component impregnated onto a refractory metal oxide support and is effective to abate hydrocarbon and carbon monoxide, as well as oxidize NO to NO.sub.2 in the exhaust gas. Methods of making and using the catalyst article are also provided, as well as emission treatment systems comprising the catalyst article.

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

A photocatalyst electrode decomposes water with light to generate gas. The photocatalyst electrode has a laminate including a substrate, a conductive layer provided on a surface of the substrate, and a photocatalyst layer provided on a surface of the conductive layer, and a first co-catalyst electrically connected to the photocatalyst layer. The light is incident from the surface side of the photocatalyst layer of the laminate, and in a case where a region where the light is incident on the surface of the photocatalyst layer and above the surface is defined as a first region and the region other than the first region is defined as a second region, the first co-catalyst is provided at least in the second region. The first co-catalyst and the photocatalyst layer are electrically connected to each other by at least one of a transparent conductive layer provided on the surface of the photocatalyst layer or a wiring line.