In various embodiments, workpieces are processed, e.g., via welding or cutting, while the shape and/or one or more other parameters of the laser processing beam are altered. The shape and/or one or more other parameters of the laser processing beam may be varied based on one or more characteristics of the workpiece.

A welding method includes: arranging a workpiece containing copper in a region to be irradiated with laser light; and irradiating the workpiece with the laser light to melt and weld an irradiated portion of the workpiece. Further, the laser light is formed of a main beam and a plurality of sub beams, and a ratio of power of the main beam to total power of the plurality of sub beams is 72:1 to 3:7.

A high power laser system for providing laser beams in various laser beam patterns along a laser beam path that is positioned to provide for the in situ laser processing of materials in tubulars, such as pipes in a hydrocarbon producing well. Laser treating for providing flow assurance by direct and indirect laser processing of materials interfering with flow.

The present disclosure generally relates to a system and method for multiple beam laser deposition of thin films wherein separate laser beams are used to ablate material from separate targets for concurrent deposition on a common substrate. The targets may include, but not limited to polymers, organics, inorganics, nanocrystals, solutions, or mixtures of materials. A target may be disposed on a tiltable mount to adjust the direction of the ablation plumes. Multiple ablation modes may be concurrently employed at the various targets, including, but not limited to pulsed laser, MAPLE, IR-MAPLE and other modes. The system may include a camera and processor for plume axis determination and feedback control of the plume axis by controlling a tilt of a target holder. Maple target loading sequences and liquid states are described. Fluorescent image monitoring is described.

A laser cleaning apparatus and a laser cleaning method are furnished, for switching the wavelengths of laser beams furnished by a single laser module using a wavelength switching module and cleaning a test piece using the laser beams having wavelengths and energy suitable for manufacturing needs. The laser cleaning method includes: creating a laser beam; switching the wavelength output by the laser based on process requirements; propagating the laser beam via an optical path propagating module for laser cleaning the test piece; and removing debris. A transfer platform allows movements of the laser beams with respect to the test piece to achieve cleaning of the entire test piece. A control module controls the wavelength switching unit, the laser beam regulating module, and the transfer platform. Total laser cleaning with improved laser cleaning quality is achieved by using these laser beams with the appropriate wavelengths and energy.

A profile selector includes at least one beam-forming lens refracting a laser beam to be incident so as to convert a beam profile and emits a laser beam having a beam profile selected from a plurality of beam profiles. A collimating lens converts a laser beam of a divergent beam to be incident into collimated light. A focusing lens focuses the collimated light emitted from the collimating lens and irradiates the focused beam to a sheet metal of a processing target. A moving mechanism moves the collimating lens along an optical axis such that a deviation of a focal point is reduced caused when the beam profile of the focused beam emitted from the focusing lens is selected by the profile selector.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a uniform rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A laser beam is directed onto a pyramid-shaped element, wherein the beam is directed onto at least three reflecting surfaces and the respective reflected partial beams are incident on reflecting surfaces arranged on an optics carrier element. The partial beams are aligned such that they intersect in a common plane. An internal wire feed is arranged in a housing, having an outlet nozzle for a fusible wire-shaped material, which material is using the energy of the partial beams. The outlet nozzle is arranged in front of the plane in which the reflected partial beams intersect. The pyramid-shaped element and the reflecting surfaces are formed on a carrier element, which is arranged in such a way that it is displaceable following the outlet nozzle in two perpendicular directions to the optical axis of the laser beam or perpendicular to the central longitudinal axis of the wire-shaped material.

A control method for a spectrum waveform of a laser beam output from a laser apparatus to an exposure apparatus includes acquiring a longitudinal chromatic aberration of the exposure apparatus, setting a target value of an evaluation value of the spectrum waveform by using a relation between the longitudinal chromatic aberration and the evaluation value, and controlling the spectrum waveform by using the target value.

A laser etching method for MEMS probes belongs to the technical field of semiconductor processing and testing; first, the MEMS probe laser etching method performs the parameter calculation to obtain the step angle of the motor according to the etching spacing of the single crystal silicon wafer; then it performs the initial position adjustment to rotate the spiral through-groove plate to the initial position and move the first etching point to the optical axis, and adjust the four-dimensional stage; and then it performs the laser etching and progress judgment; and finally adjusts the four-dimensional stage and the motor, including the downward movement distance, left movement distance and clockwise rotation angle of the four-dimensional stage and the rotation angle of the motor; the MEMS probe laser etching method, combined with the MEMS probe laser etching device, not only has higher etching accuracy, but also continuously adjusts the etching spacing.