Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, where the method includes forming an interconnect structure over a first substrate. A dielectric structure is formed over the interconnect structure. The dielectric structure comprises opposing sidewalls defining an opening. A conductive bonding structure is formed on a second substrate. A bonding process is performed to bond the conductive bonding structure to the interconnect structure. The conductive bonding structure is disposed in the opening. The bonding process defines a first cavity between inner opposing sidewalls of the conductive bonding structure and a second cavity between the conducive bonding structure and the opposing sidewalls of the dielectric structure.

Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure overlying a first substrate. A second substrate overlies the dielectric structure and comprises a movable element. A first bond structure is arranged between the dielectric structure and the second substrate. A second bond structure is arranged between the dielectric structure and the second substrate. At least a portion of the movable element is spaced laterally between sidewalls of the second bond structure. The first bond structure comprises a first material and the second bond structure comprises a second material different form the first material. A thickness of the first bond structure is less than a thickness of the second bond structure.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A technique relates to a nanogap array. A substrate has been anisotropically etched with trenches that have tapered sidewalls. A sacrificial layer is on bottoms and the tapered sidewalls of the trenches. A filling material is formed on top of the sacrificial layer in the trenches. Nanogaps are formed where at least a portion of the sacrificial layer has been removed from the tapered sidewalls of the trenches while the sacrificial layer remains on the bottoms of the trenches. Each of the nanogaps is formed between one tapered sidewall of the substrate and a corresponding tapered sidewall of the filling material. The one tapered sidewall of the substrate opposes the corresponding tapered sidewall. A capping layer is disposed on top of the substrate and the filling material, such that the nanogaps are covered but not filled in.

Disclosed is an ultrasonic transducer that is provided with: a bottom electrode; an electric connection part which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity; and a top electrode which is formed on the second insulating film so as to overlap the cavity when seen from above. The electric connection part to the bottom electrode is positioned so as to not overlap the cavity when seen from above.

One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.

A method for deigning a low voltage capacitive micromachined ultrasonic transducer (CMUT) is provided. The method includes starting from a base silicon wafer includes starting with a N-type Silicon Wafer and growing base oxide by patterning with a metal mask over the base oxide, patterning with a Field Oxide (FOX) Mask over a copper (Cu) or Aluminium (Al) metal (M1) layer that is deposited over the base oxide, depositing polysilicon over the entire silicon wafer and doping the polysilicon with a donor species with a concentration approaching its respective solid solubility limit and subsequently depositing titanium (Ti) over the doped polysilicon that is deposited on the entire silicon wafer and subsequently depositing a dielectric layer. The dielectric layer is standalone Silicon Dioxide or in a stack with Hafnium Oxide or alternatively in a stack with Silicon Nitride or a suitable stack of high relative permittivity materials.

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.