B81C2201/0105

Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
12344524 · 2025-07-01 · ·

Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

Method for manufacturing MEMS device and MEMS device

A method for manufacturing a MEMS device and the MEMS device are provided. The method includes: depositing a film on at least a part of a surface of a sacrificial layer, defining at least one through hole in the thin film by machining, removing at least a part of a material covered by the thin film in the sacrificial layer, discharging the part of the material removed from the sacrificial layer from the at least one through hole to define a cavity in the sacrificial layer, and depositing a sealing layer on a surface of the thin film facing away from the sacrificial layer to seal the at least one through hole. Compared with the manufacturing method in the related art, the manufacturing method of the disclosure only requires to deposit one layer of thin film, shorten the production period, and has reliable on-site sealing capability.

MICROELECTROMECHANICAL SENSOR WITH IMPROVED EXTERNAL FLUIDIC COUPLING AND MANUFACTURING PROCESS THEREOF

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

Monolithic Microelectromechanical Systems Based Spatial Light Modulators with Two-dimensional Modulators

Monolithic microelectromechanical systems (MEMS)-based spatial light modulators (SLM) are provided. Generally, the SLM includes a common electrode in or on a substrate, an electrostatically displaceable actuator including an actuator electrode suspended above an upper surface on the substrate, a first light reflective surface supported by and separated from the upper surface on the substrate by the actuator, and a driver monolithically integrated in the substrate below the SLM. The actuator includes a structural layer of tensile, amorphous silicon-germanium that also serves as an actuator electrode. The driver includes multiple layers of vias, metal interconnects, and complementary metal-oxide-semiconductor (CMOS) devices to electrically couple to the common electrode and actuator, and is operable to displace the actuator and first light reflective surface in response to voltages applied thereto.

Monolithic Microelectromechanical Systems Based Spatial Light Modulators Including Ribbon-Type Modulators

Monolithic microelectromechanical systems (MEMS) based spatial light modulators (SLM) including ribbon-type modulators and drivers integrally fabricated in or on a common substrate are provided. Generally, the monolithic MEMS-based SLM includes a common electrode in or on a substrate, a number of electrostatically displaceable ribbons, each including a tensile, amorphous silicon-germanium layer (SiGe layer) that serves as a structural layer and as a ribbon electrode, and a light reflective surface on the SiGe layer facing away from the surface on the substrate. A driver including a plurality of drive channels monolithically integrated in the substrate below the surface, the driver electrically coupled to the common electrode and each ribbon electrode and operable to apply voltages thereto to drive the plurality of ribbons to modulate light reflected from the light reflective surfaces.

Micro-device structures with etch holes
12448283 · 2025-10-21 · ·

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

PROCESS FOR PRODUCING A PLURALITY OF MEMS TRANSDUCERS WITH ELEVATED PERFORMANCE CAPABILITY
20250358579 · 2025-11-20 ·

The invention preferably relates to a method for producing a MEMS transducer comprising a membrane and a carrier, wherein the membrane exhibits a meander structure comprising vertical and horizontal sections. Here, a shaping component is first provided which is coated with a membrane layer system. The membrane layer system comprises at least one actuator layer comprising an actuator material. By structuring the membrane layer system, membranes are provided which can be attached to a carrier. The shaping component can be completely removed.

Furthermore, the invention preferably relates to a MEMS transducer which can be produced by means of the method.

MEMS switch, preparation method thereof, and electronic apparatus

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

Method of making mems microphone with an anchor
12495260 · 2025-12-09 · ·

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

MEMS and NEMS structures

An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.