An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

A method for producing a micromechanical layer structure with a high aspect ratio of a layer thickness to a distance of a first structural element from an adjacent second structural element in a main direction of extent of the layer structure. The method including: providing a substrate with an etching stop layer and a micromechanical functional layer; forming at least one recess in the functional layer by etching as far as the etching stop layer; depositing an intermediate layer sequence including a first insulation layer, an intermediate layer, and a second insulation layer; filling the recess by depositing a filling layer; planarizing the surface of the filling layer; etching the intermediate layer by etching access points through the intermediate layer sequence; exposing the first and second structural elements by etching the first insulation layer and the second insulation layer by a second etching process.