A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

A MEMS microphone is provided. The MEMS microphone includes a substrate, a membrane, and a backplate. The substrate is with a cavity. The membrane is disposed on the substrate across the cavity. The backplate is disposed over the membrane and separated from the membrane by an air gap. The membrane has a corrugation. The backplate has a portion corresponding to and directly above the corrugation. A step height of the portion is equal to or less than 20% of a step height of the corrugation.

A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.

In an embodiment a MEMS sensor arrangement includes a substrate, a pressure sensor structure and a sound transducer structure in a vertically stacked and mechanically coupled configuration, wherein the pressure sensor structure is arranged between the substrate and the sound transducer structure and a through-opening extending through the substrate and the pressure sensor structure and forming a sound-port for the sound transducer structure, wherein the sound transducer structure spans the through-opening, and wherein the pressure sensor structure comprises a pressure sensor element, which is in fluidic connection with the through-opening.

A method includes forming a microelectromechanical system (MEMS) device wherein the MEMS device includes a cavity and one or more release holes extending from a surface of the MEMS device to the cavity, and sealing at least a portion of the MEMS device including the one or more release holes with a film utilizing a physical vapor deposition (PVD) process.

A microelectromechanical system (MEMS) device includes: a mechanical layer; a second layer; and a via coupled between the mechanical layer and the second layer. The via comprising a metal layer having a bottom and sides, and oxide on the bottom of the metal layer between the sides of the metal layer.

Embodiments of the present invention relate to the technical field of semiconductor devices and disclose a MEMS microphone and a method for preparing the same. In the disclosure, the substrate is provided with at least one chamfer at an inner edge of a side of the substrate close to the diaphragm, so that when the diaphragm is bent towards the substrate due to vibration, providing the chamfer can prevent the diaphragm from hitting the substrate, or increase the contact area between the diaphragm and the substrate when the diaphragm hits the substrate, avoiding the concentration of stress and thus reducing the risk of the diaphragm breaking. In this way, the probability of failure of the MEMS microphone due to breakage of the diaphragm can be reduced, and the robustness of the MEMS microphone can be enhanced.

A cantilever comprises a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress, and a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress. The cantilever is curved along a lengthwise z-dimension of the cantilever due to a difference between the first and second intrinsic stresses. The second dielectric layer comprises a plurality of crossbars angled relative to an x-dimension width of the cantilever to control curvature in the x-dimension width of the cantilever, to induce a change in pitch along the length of the cantilever, and to induce a change in roll along the length of the cantilever.

In a method of post-processing MEMS chips comprising MEMS structures arranged on a carrier material and having at least one projection region of projecting material protruding laterally beyond the region of the MEMS chip provided with MEMS structures, at least one projection region is removed by separating the projecting material from the carrier material of the MEMS chip. For handling MEMS chips without regions projecting beyond the MEMS structures arranged on a carrier material, for example after post-processing according to the disclosure has been carried out, at least one lateral depression is provided in the carrier material and the MEMS chips are handled by way of a tool engaging in the lateral depression(s).

A production method for a micromechanical component for a sensor device or microphone device. The method includes: forming a supporting structure composed of a first sacrificial material on a substrate surface of a substrate with a first sacrificial material layer, a plurality of etching holes structured through the first sacrificial material layer, and a plurality of supporting posts projecting into the substrate; etching into the substrate surface at least one cavity spanned by the supporting structure; forming a diaphragm composed of at least one semiconductor material on or over the first sacrificial material layer of the supporting structure; depositing a layer stack comprising at least one sacrificial layer and at least one counter electrode; and exposing the diaphragm by at least partially removing at least the supporting structure and the at least one sacrificial layer.