A process for area selective atomic layer deposition (ALD) at the near atomic scale (sub 10 nm) is disclosed. A substrate surface is cleaned and terminated with hydrogen and a pattern written in the hydrogen terminated surface by selectively depassivating the surface using scanning tunneling microscope lithography. The depassivated regions are subjected to a halogen flux with the thus passivated regions further subjected to a functionalization process creating functionalized regions. The role of hydrogen and halogen can be inverted to invert the tone of the pattern. The substrate is then subjected to the ALD process, with growth occurring only in the non-functionalized regions. The substrate may then optionally be subjected to selective etching to remove the functionalized regions and the portions of the substrate under the functionalized regions.

Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

There is provided a film forming method of forming a film in a recess formed on a surface of a substrate. The film forming method includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas to a region other than the adsorption-inhibiting region by supplying the silicon-containing gas to the substrate; and forming a silicon nitride film by exposing the substrate to a nitrogen-containing gas so that the nitrogen-containing gas reacts with the adsorbed silicon-containing gas, wherein the adsorbing the silicon-containing gas includes controlling a dose amount of the silicon-containing gas to be supplied to be equal to or greater than an adsorption saturation amount of the silicon-containing gas to be adsorbed on the substrate on which no adsorption-inhibiting region is formed.

A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method further includes forming a conductive material on the auxiliary layer. The conductive material incudes AlSiCu, AlSi or tungsten, and is electrically connected to the part of the semiconductor structure via the auxiliary layer.

There is provided a technique that includes: forming a nitride film containing a predetermined element on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including sequentially performing: (a) supplying a first precursor gas containing a molecular structure containing the predetermined element to the substrate with a pressure of the process chamber being set to a first pressure; (b) supplying a second precursor gas, which is different from the first precursor gas and contains a molecular structure containing the predetermined element and not containing a bond between atoms of the predetermined element, to the substrate with the pressure of the process chamber being set to a second pressure higher than the first pressure; and (c) supplying a nitriding agent to the substrate.

A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. A layer of a first silicon-containing material defining one or more features may be disposed on the substrate. The methods may include contacting the substrate with the one or more deposition precursors. The contacting may deposit a liner material on the first silicon-containing material. The methods may include performing an atomic layer deposition (ALD) process. The ALD process may deposit a silicon-and-oxygen-containing material in the one or more features.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over first and second fin structures, and a gate spacer layer formed on a sidewall surface of the gate structure. The semiconductor structure includes a first source/drain (S/D) epitaxial structure formed adjacent to the gate structure in the first fin structure. The S/D epitaxial structure comprises first and second S/D epitaxial layers. The semiconductor structure may include a second S/D epitaxial structure formed adjacent to the gate structure in the second fin structure. A contact structure may be formed over the first and second S/D epitaxial structures.

Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.