A film forming method includes forming a silicon nitride film in a recess in a substrate surface. Forming of the silicon nitride film includes: supplying an adsorption-inhibiting gas for inhibiting adsorption of a silicon-containing gas to the substrate surface in a form of a plasma; supplying the silicon-containing gas to the substrate surface; and supplying a nitriding gas for nitriding an adsorbate of the silicon-containing gas to the substrate surface in a form of a plasma. Nitriding gas contains N.sub.2 gas. Forming of the silicon nitride film includes supplying an adsorption-promoting gas for promoting adsorption of the silicon-containing gas to the substrate surface. Performing a process: including supplying of the adsorption-inhibiting gas; supplying of the silicon-containing gas; and supplying of the nitriding gas one or more times, and performing supplying of the adsorption-promoting gas one or more times are performed a plurality of times repeatedly.

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base; supplying a film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base; and supplying a halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.

The present disclosure provides a semiconductor capacitor. The semiconductor capacitor includes a first conductive layer, a second conductive layer and a dielectric layer. The dielectric layer is located between the first conductive layer and the second conductive layer, and the first conductive layer and/or the second conductive layer are performed a plasma treatment to remove impurities therein and replace the impurities with nitrogen atoms. In addition, a method of forming a semiconductor capacitor is also disclosed.

A method of processing a substrate that includes: loading the substrate having a raised feature with at least two sidewalls exposed in a processing chamber; depositing a first layer over the substrate to cover a first portion of the two sidewalls; depositing a second layer over the first layer to cover a second portion of the two sidewalls; depositing a third layer over the second layer and the raised feature to cover a third portion of the sidewalls and a top surface of the raised feature; performing an anisotropic dry etching that removes portions of the second layer and the third layer, a remainder of the second layer forming a second sidewall spacer and a remainder of the third layer forming a third sidewall spacer; and performing an isotropic etching that selectively removes the second sidewall spacer to expose portions of the sidewalls of the raised feature.

A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400 C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.

A film forming method of forming an oxide film, which contains at least a predetermined element and oxygen, on a substrate, includes: (a) supplying a first raw material gas, which contains the predetermined element, to the substrate; (b) supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, to the substrate; and (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).