An integrated circuit package with a perforated stiffener ring and the method of forming the same are provided. The integrated circuit package may comprise an integrated circuit package component having an integrated circuit die on a substrate, an underfill between the integrated circuit package component and the substrate, and a stiffener ring attached to the substrate. The stiffener ring may encircle the integrated circuit package component and the underfill in a top-down view. The stiffener ring may comprise a perforated region, wherein the perforated region may comprise an array of openings extending from a top surface of the stiffener ring to a bottom surface of the stiffener ring.

A display panel, a fabrication method of the display panel, and a display apparatus are provided in the present disclosure. The display panel includes a substrate; a drive substrate on the substrate, where the drive substrate includes a first film layer; and the first film layer includes a first opening; and a light-emitting element on the drive substrate, where the light-emitting element is disposed corresponding to the first opening. The drive substrate further includes an auxiliary film layer; and the auxiliary film layer includes a thickened part, a thinned part, or a hollow part overlapped with the first opening.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

A zone heater assembly of a reflow solder tool includes a gas deflector having a single-layer structure. The single-layer structure may include one or more gas-permeating patterns through which a process gas is to flow from one or more gas outlets to a gas exhaust of the zone heater assembly. The one or more gas-permeating patterns in the single-layer structure promote uniformity of gas flow through the gas exhaust and into a heating zone of the reflow solder tool. The uniformity of the gas flow of the process gas enables convection heat provided by the process gas to be uniformly distributed across the heating zone. In this way, the gas deflector described herein may decrease hot spots and/or cold spots in the heating zone, which enables greater flexibility in placement of semiconductor package substrates on a conveyor device of the reflow solder tool.

A semiconductor module includes an interposer, a plurality of semiconductor dies on the interposer, wherein each semiconductor die of the plurality of semiconductor dies has a frontside surface facing the interposer and a backside surface opposite to the interposer, and a backside capacitor on the backside surface of at least one of the plurality of semiconductor dies and electrically coupled to the interposer.

A method for forming an electronic device is provided, comprising: providing a glass substrate, wherein the glass substrate has on its top surface a top redistribution layer; attaching an electronic component on the top redistribution layer of the glass substrate; bonding the electronic component onto the top redistribution layer by applying laser assisted bonding through the glass substrate; forming an encapsulant layer on the glass substrate to encapsulate the electronic component and the top redistribution layer; forming through vias in the glass substrate; forming a bottom redistribution layer onto a bottom surface of the glass substrate; and mounting solder bumps onto the bottom redistribution layer.

A power device and method of making said power device. The device including a gate controller coupled to a first substrate. A first set of one or more transistor devices is coupled to a second substrate and a second set of one or more transistor devices is also coupled to the second substrate. The first set of transistor devices and second set of transistor devices are communicatively coupled to the gate controller.

A semiconductor package includes a plurality of leads, each lead having a planar portion and a non-planar portion, in which: the planar portion has a first side and a second side opposing the first side, and the non-planar portion is at an angle with the planar portion. The semiconductor package includes a first device mechanically coupled to the first side of the planar portion with first interconnects and a second device mechanically coupled to the second side of the planar portion with second interconnects. The semiconductor package includes mold compound covering the first device and the second device, in which: a first mold overlay is on a side of the first device distant from the leads, and a second mold overlay is on a side of the second device distant from to the leads.

A connection structural body includes: a first connection terminal including a first opposing surface; a first roughened-surface copper metal film formed on the first opposing surface; a second connection terminal including a second opposing surface facing the first opposing surface; and a second roughened-surface copper metal film formed on the second opposing surface and bonded to the first roughened-surface copper metal film. The first roughened-surface copper metal film includes a structure in which first deposits of copper are piled over one another on the first opposing surface. The second roughened-surface copper metal film includes a structure in which second deposits of copper are piled over one another on the second opposing surface. A bonded portion of the first and second roughened-surface copper metal films includes a structure in which the first deposits and the second deposits are piled such that the bonded portion includes pores.

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.