Provided is a thermosetting resin composition containing: (A) silver particles including secondary particles having an average particle size from 0.5 to 5.0 m, the secondary particles being formed by aggregation of primary particles having an average particle size from 10 to 100 nm; and (B) a thermosetting resin.

The present invention discloses an elastic heat spreader for chip packaging, a packaging structure and a packaging method. The heat spreader includes a top cover plate and a side cover plate that extends outward along an edge of the top cover plate, wherein the top cover plate is configured to be placed on a chip, and at least a partial region of the side cover plate is an elastic member; and the elastic member at least enables the side cover plate to be telescopic in a direction perpendicular to the top cover plate. According to the present invention, a following problem is solved: delamination between the heat spreader and a substrate as well as the chip due to stress generated by different thermal expansion coefficients of the substrate, the heat spreader and the chip in a packaging process of a large-size product.

A hollow package includes a device substrate; a lid substrate provided above the device substrate; a first sealing ring provided on an upper surface of the device substrate; a second sealing ring provided on a lower surface of the lid substrate so as to face the first sealing ring; a seal layer that bonds the first sealing ring and the second sealing ring; and a functional element provided in a hollow portion surrounded by the device substrate, the lid substrate, the first sealing ring, the second sealing ring, and the seal layer, wherein the first sealing ring or the second sealing ring has a corner portion in a planar view, and the first sealing ring or the second sealing ring has a recess, which is recessed in a direction perpendicular to the upper surface of the device substrate, locally formed in a portion including the corner portion.

A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor substrate that has a first main surface on one side and a second main surface on the other side, the semiconductor substrate on which a plurality of device forming regions and an intended cutting line that demarcates the plurality of device forming regions are set, a step of forming a first electrode that covers the first main surface in each of the device forming regions, a step of forming a second electrode that covers the second main surface, a step of partially removing the second electrode along the intended cutting line such that the semiconductor substrate is exposed, and forming a removed portion that extends along the intended cutting line, and a step of cutting the semiconductor substrate along the removed portion.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

The present disclosure describes a bonded semiconductor structure and a method of forming the bonded semiconductor structure. The bonded semiconductor structure includes first and second substrates bonded with a bonding structure. The bonding structure provides high thermal conductivity and high bonding strength between the first and second substrates. The bonding structure includes bonding layers and adhesion layers, with the bonding layers including titanium oxide and the adhesion layers including titanium nitride. The method includes forming a first adhesion layer on the first substrate and a second adhesion layer on the second substrate. The method also includes forming a first bonding layer on the first adhesion layer and a second bonding layer on the second adhesion layer. The method further includes bonding the first and second substrates by bonding the first and second bonding layers together.

A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Provided are silver particles including a silver powder and a silver layer that includes primary particles, the primary particles being smaller than the silver powder.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200 C. and in some embodiments at about 150 C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.