Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

Hybrid fanouts for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, at least one edge a first semiconductor die is attached to a molding including through mold vias (TMVs). Conductive traces may be formed on a first side of the first semiconductor die, where the first side includes integrated circuitry coupled to the conductive traces. Moreover, conductive pads may be formed on a surface of the molding, which is coplanar with the first side. The conductive pads are coupled to first ends of the TMVs, where second ends of the TMVs are coupled to bond wires connected to one or more second semiconductor dies that the first semiconductor die carries. Conductive bumps can be formed on the conductive traces and pads such that the first semiconductor die and the molding attached thereto can be directly attached to a printed circuit board.

A multi-layered board includes an upper insulating layer, a lower conductive layer including first lower conductive parts, an upper conductive layer between the lower conductive layer and the upper insulating layer and including first upper conductive parts and second upper conductive parts, and a lower insulating layer between the lower conductive layer and the upper conductive layer. The first upper conductive part includes a first pad exposed from a hole of the upper insulating layer. The second upper conductive part includes a second pad exposed from a hole of the upper insulating layer. At least a part of the first pad is in direct contact with the first lower conductive part within a hole of the lower insulating layer. The second pad is outside any hole of the lower insulating layer. A top surface of the second pad is higher than a top surface of the first pad.

An embodiment is a device including an integrated circuit die having an active side and a back side, the back side being opposite the active side, a molding compound encapsulating the integrated circuit die, and a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure including a first metallization pattern and a first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die, at least a portion of the first metallization pattern forming an inductor.

A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

An integrated passive device (IPD) package is manufactured to include electrical connections on two or more sides of the IPD package. The IPD package may be embedded in a package core of a package substrate of a semiconductor package, which enables electrical connections to be connected to top and bottom redistribution structures of the package substrate using the conductive pads on multiple sides of the IPD package, thereby enabling the quantity and density of passive device structures included in the IPD package to be increased. The electrical connections on two or more sides of the IPD package enable the IPD package to include a plurality of IPD layers or slides of passive device components, which enables the quantity and density of passive device structures included in the IPD package to be further increased.

A die includes a substrate, a conductive pad, a connector a protection layer, and a passivation layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector comprises a seed layer and a conductive post on the seed layer. The protection layer laterally covers the connector. The passivation layer is disposed between the protection layer and the conductive pad. The conductive post is separated from the passivation layer and the protection layer by the seed layer.

A fan-out wafer level packaging (FOWLP) unit and a package formed by stacking the same are provided. The FOWLP unit includes a substrate, at least one die, a first dielectric layer, at least one second conductive pillar, a second dielectric layer, a plurality of first conductive circuits, a third dielectric layer, and a plurality of metal protective layers. The first conductive circuits are produced on a second surface of the die by filling a metal paste into slots and grinding the metal paste. A layout of second bonding pads on a first surface of the FOWLP unit and a layout of first bonding pads on a second surface of the FOWLP unit are the same and this is beneficial to mass-production of the FOWLP units.

A carrier structure is provided, in which at least one positioning area is defined on a chip-placement area of a package substrate, and at least one alignment portion is disposed on the positioning area. Therefore, the precision of manufacturing the alignment portion is improved by disposing the positioning area on the chip-placement area, such that the carrier structure can provide a better alignment mechanism for the chip placement operation.

A glass substrate may include a first redistribution structure, a core layer on the first redistribution structure, and a second redistribution structure on the core layer. The core layer may include a glass core and a dummy structure surrounding side surfaces of the glass core. The dummy structure may include a metal material, an organic material, or both the metal material and the organic material.