A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over first and second fin structures, and a gate spacer layer formed on a sidewall surface of the gate structure. The semiconductor structure includes a first source/drain (S/D) epitaxial structure formed adjacent to the gate structure in the first fin structure. The S/D epitaxial structure comprises first and second S/D epitaxial layers. The semiconductor structure may include a second S/D epitaxial structure formed adjacent to the gate structure in the second fin structure. A contact structure may be formed over the first and second S/D epitaxial structures.

A film forming method includes forming a silicon nitride film in a recess in a substrate surface. Forming of the silicon nitride film includes: supplying an adsorption-inhibiting gas for inhibiting adsorption of a silicon-containing gas to the substrate surface in a form of a plasma; supplying the silicon-containing gas to the substrate surface; and supplying a nitriding gas for nitriding an adsorbate of the silicon-containing gas to the substrate surface in a form of a plasma. Nitriding gas contains N.sub.2 gas. Forming of the silicon nitride film includes supplying an adsorption-promoting gas for promoting adsorption of the silicon-containing gas to the substrate surface. Performing a process: including supplying of the adsorption-inhibiting gas; supplying of the silicon-containing gas; and supplying of the nitriding gas one or more times, and performing supplying of the adsorption-promoting gas one or more times are performed a plurality of times repeatedly.

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

A method of processing a substrate that includes: loading the substrate having a raised feature with at least two sidewalls exposed in a processing chamber; depositing a first layer over the substrate to cover a first portion of the two sidewalls; depositing a second layer over the first layer to cover a second portion of the two sidewalls; depositing a third layer over the second layer and the raised feature to cover a third portion of the sidewalls and a top surface of the raised feature; performing an anisotropic dry etching that removes portions of the second layer and the third layer, a remainder of the second layer forming a second sidewall spacer and a remainder of the third layer forming a third sidewall spacer; and performing an isotropic etching that selectively removes the second sidewall spacer to expose portions of the sidewalls of the raised feature.

There is provided a configuration that includes: a first gas supply line configured to be capable of controlling a flow rate of a first precursor gas, which is generated by a first raw material, by a flow rate controller, and supplying the first precursor gas into the process chamber; and a second gas supply line configured to be capable of supplying a second precursor gas, which is generated by a second raw material, into the process chamber, wherein a flow rate of the second precursor gas is determined based on a pressure difference between a primary-side pressure of the flow rate controller installed at the first gas supply line and a supply pressure of the second precursor gas from the second gas supply line into the process chamber.

A method of fabricating a semiconductor device includes providing a GaN substrate with an epitaxial layer formed thereover, the epitaxial layer forming a heterojunction with the GaN substrate, the heterojunction supporting a 2-dimensional electron gas (2DEG) channel in the GaN substrate. A composite surface passivation layer is formed over a top surface of the epitaxial layer, wherein the composite surface passivation layer comprises a first passivation layer portion formed proximate to a first region of the GaN device and a second passivation layer portion formed proximate to a second region of the GaN device. The first and second passivation layer portions are disposed laterally adjacent to each other over the epitaxial layer, wherein the first passivation layer portion is formed in a first process and the second passivation layer portion is formed in a second process.

A technique includes: (a) a pair of injectors each supplying a film formation gas toward a substrate; (b) a pair of tanks connected to the pair of injectors respectively and accumulating the gas; (c) a pair of opening and closing valves controlling fluid communication of the gas between the pair of injectors and the pair of tanks in a corresponding manner, respectively; (d) a pair of pressure gauges measuring internal pressures of the pair of tanks, respectively, during accumulation of the gas; (e) a pair of flow rate limiters supplying the gas to the pair of tanks at a set flow rate set in advance to form a standard accumulation amount as a target amount of the gas, respectively; and (f) a controller capable of performing correcting the set flow rate so as to approach the standard accumulation amount.

There is provided a technique that includes: a process chamber in which a substrate is processed; a first gas supplier configured to supply a first gas to a first region in the process chamber; a second gas supplier configured to supply a second gas to a second region in the process chamber different from the first region; and a controller configured to be capable of controlling the first gas supplier and the second gas supplier to supply the first gas and the second gas such that a pressure difference between the first region and the second region is reduced when the first gas is supplied in a flash-like manner.

There is provided a technique that includes: (a) supplying a precursor to a substrate; (b) supplying a reactant to the substrate; (c) supplying a regulating agent, which regulates an amount of at least one selected from the group of a molecule of the precursor and a molecule of the reactant adsorbed on the substrate, to the substrate; (d) performing a process in which at least one selected from the group of (a) and (b) overlaps (c); and (e) after (d), performing (a) or (b) which overlaps (c) in (d), independently of (c).

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.