A semiconductor wafer includes a semiconductor substrate on which an interlayer insulating film and a surface protective film are laminated on an upper surface. A plurality of semiconductor elements to be divided into small pieces by dicing along an opening formed in the surface protective film are formed on the semiconductor substrate. An end of the interlayer insulating film is retracted more than an end of the surface protective film with respect to an end of the semiconductor substrate to be formed by the dicing, and a shape of the end of the interlayer insulating film is set such that, in each of the semiconductor elements after the dicing, a distance Lx from a corner of the semiconductor substrate to be formed by the dicing to the end of the interlayer insulating film and a thickness d of the semiconductor substrate satisfy a certain condition.

A semiconductor die is arranged at a mounting region of a surface of a substrate. A substrate includes electrically conductive leads around a die pad including a mounting region. A metallic layer is located at one or more portions of the substrate including the mounting region. A semiconductor die is arranged at a mounting region. The metallic layer is selectively exposed at portions less than all of the metallic layer to an oxidizing plasma to produce a patterned oxide layer including oxides of metallic material in the metallic layer. An electrically insulating encapsulation is molded onto the surface of the substrate to encapsulate the semiconductor die. The oxides of metallic material in the patterned oxide layer facilitate adhesion of the electrically insulating encapsulation to the surface of the substrate.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A semiconductor package includes a first semiconductor chip having a first surface and a second surface. First connection pads are adjacent to the first surface. A second semiconductor chip has a lower surface facing the first surface of the first semiconductor chip and includes second connection pads, Connection bumps contact the first connection pads and the second connection pads between the first semiconductor chip and the second semiconductor chip. An adhesive layer is interposed between the first semiconductor chip and the second semiconductor chip to at least partially surround the connection bumps. The adhesive layer includes a protruding portion protruding from a side surface of the second semiconductor chip. A barrier structure covers a portion of the first connection pads, partially overlapping the second semiconductor chip on the first surface, and contacting the protruding portion of the adhesive layer.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A semiconductor device may include a semiconductor substrate, a wire placed along at least a portion of a perimeter of the semiconductor substrate, and processing circuitry connected to the wire, the processing circuitry to, based on a signal from the wire, determine whether or not the semiconductor device is damaged.

A packaging structure and methods of forming the same are described. In some embodiments, the structure includes a through via, a first semiconductor die disposed adjacent the through via, a stress relief layer disposed on side surfaces of the through via and side surfaces of the first semiconductor die, and a molding material disposed on the stress relief layer and between the through via and the first semiconductor die. Top surfaces of the through via, the semiconductor die, and the molding material are substantially coplanar.

A semiconductor device, including: a stacked substrate; a semiconductor device element mounted on the stacked substrate via a first bonding layer; a metal base bonded to the stacked substrate via a second bonding layer; and a water jacket bonded to the metal base, the water jacket having two ends and a center portion. The first and second bonding layers are identical, or different, in a material and a composition thereof. The water jacket has a plurality of heat dissipation fins, lengths of which are in an ascending order from each of the ends of the water jacket to the center portion of the water jacket.

A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.

The present disclosure is directed to semiconductor packages manufactured utilizing a leadframe with varying thicknesses. The leadframe with varying thicknesses has a reduced likelihood of deformation while being handled during the manufacturing of the semiconductor packages as well as when being handled during a shipping process. The method of manufacturing is not required to utilize a leadframe tape based on the leadframe with varying thicknesses. This reduces the overall manufacturing costs of the semiconductor packages due to the reduced materials and steps in manufacturing the semiconductor packages as compared to a method that utilizes a leadframe tape to support a leadframe. The semiconductor packages may include leads of varying thicknesses formed by utilizing the leadframe of varying thicknesses to manufacture the semiconductor packages.