A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a first electrically conductive spacer coupled to inner surface of the first substrate and to the inner surface of the second substrate.

An integrated circuit chip includes; a package substrate including a first signal ball, a first semiconductor chip on the package substrate, a second semiconductor chip on the first semiconductor chip, a first bump disposed between the package substrate and the first semiconductor chip and electrically connected to the first signal ball, and a second bump disposed between the first semiconductor chip and the second semiconductor chip and electrically connected to the first signal ball, wherein during a first mode, the first signal ball receives a signal from the first semiconductor chip through the first bump and receives a signal from the second semiconductor chip through the second bump.

A wiring substrate includes a first build-up part including first insulating layers, first conductor layers formed on the first insulating layers, and first via conductors formed in the first insulating layers, and a second build-up part laminated to the first build-up part and including second insulating layers, second conductor layers formed on the second insulating layers, and second via conductors formed in the second insulating layers. A wiring width and an inter-wiring distance of wirings in the first conductor layers of the first build-up part are smaller than a wiring width and an inter-wiring distance of wirings in the second conductor layers of the second build-up part, and the first build-up part is formed such that the first insulating layers include insulating resin and inorganic particles and that the insulating resin in the first insulating layers forms the surfaces of the first insulating layers covered by the first conductor layers.

Each of a selected plurality of different facilities are fabricated into respective tiles, each tile being fabricated using processes best suited to the function of the facility. After tile testing, a selected set of good tiles is fabricated into a single, monolithic substrate in accordance with a selected layout. After substrate testing, the good substrate is then fabricated into a single advanced package.

A semiconductor package includes a first semiconductor chip, a sealing layer molding the first semiconductor chip, and an upper connection structure on the sealing layer, wherein the upper connection structure includes an insulating layer. The insulating layer includes marking patterns defined by a first region and a second region, the first region being at at least a portion of the insulating layer and having a first light transmittance value, the second region being at at least a portion of the first region and having a second light transmittance value different from the first light transmittance value.

A manufacturing method includes: forming a stacked chip structure, wherein forming the stacked chip structure includes: attaching a semiconductor wafer for first semiconductor chips onto a carrier and attaching second semiconductor chips onto the semiconductor wafer, forming a first heat dissipation pattern on an upper surface of the semiconductor wafer and side surfaces of the second semiconductor chips, and cutting the first heat dissipation pattern and the semiconductor wafer to separate the semiconductor wafer into the first semiconductor chips; mounting the stacked chip structure including at least one of the first semiconductor chips and at least one of the second semiconductor chips on a first interconnection structure; and forming a second heat dissipation pattern on the first interconnection structure.

An integrated circuit package includes a substrate, a semiconductor interposer on the substrate, and a first integrated circuit chip on the interposer. The interposer includes a galvanic effect test structure including a test contact pad and a detection contact pad. The interposer includes a plurality of primary contact pads electrically coupled to the first integrated circuit chip. The galvanic effect structure can be utilized to test the interposer for galvanic corrosion prior to assembling the interposer into the integrated circuit package.

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

An electronic network device includes a package substrate, an Integrated Circuit (IC) mounted on the package substrate, and a plurality of interconnection terminals disposed on a surface of the package substrate. The interconnection terminals include multiple pairs of signal terminals and multiple ground terminals. The interconnection terminals are arranged in a hexagonal grid in which (i) a given interconnection terminal is surrounded by six other interconnection terminals, and (ii) propagation paths between signal terminals that do not belong to a same pair are at least partially blocked by the ground terminals.