Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

A circuit board according to an embodiment includes an insulating layer, a first circuit pattern layer disposed on the insulating layer; a second circuit pattern layer disposed below the insulating layer; and a via passing through the insulating layer and connecting the first circuit pattern layer and the second circuit pattern layer, wherein the via has a first width at an upper surface and a second width less than the first width at a first region between the upper surface and a lower surface, wherein the first region is a region with a minimum width among all regions of the via, and wherein the second width satisfies a range of 70% to 99% of the first width.

A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a first substrate, a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery; and a motor.

A semiconductor device assembly includes a first semiconductor device having a first plurality of electrical contacts with a first average pitch, a second semiconductor device over the first semiconductor device and having a second plurality of electrical contacts with a second average pitch, and a signal routing structure between the first and second semiconductor devices and including a first plurality of conductive structures, each in contact with one of the first plurality of electrical contacts, a second plurality of conductive structures, each in contact with one of the second plurality of electrical contacts, and a pattern of parallel conductive lines between the first and second pluralities of conductive structures. The pattern of parallel conductive lines has a third average pitch less than the first and second average pitches, and pairs of conductive structures from the first and second pluralities are electrically coupled by different ones of the parallel conductive lines.

A semiconductor device assembly includes a first semiconductor device having a first plurality of electrical contacts with a first average pitch, a second semiconductor device over the first semiconductor device and having a second plurality of electrical contacts with a second average pitch, and a signal routing structure between the first and second semiconductor devices and including a first plurality of conductive structures, each in contact with one of the first plurality of electrical contacts, a second plurality of conductive structures, each in contact with one of the second plurality of electrical contacts, and a pattern of parallel conductive lines between the first and second pluralities of conductive structures. The pattern of parallel conductive lines has a third average pitch less than the first and second average pitches, and pairs of conductive structures from the first and second pluralities are electrically coupled by different ones of the parallel conductive lines.

A method of forming a semiconductor structure includes: forming a first redistribution structure on a first side of a wafer, the first redistribution structure including dielectric layers and conductive features in the dielectric layers; forming grooves in the first redistribution structure, the grooves exposing sidewalls of the dielectric layers and the wafer, the grooves defining a plurality of die attaching regions; bonding a plurality of dies to the first redistribution structure in the plurality of die attaching regions; forming a first molding material on the first side of the wafer around the plurality of dies, the first molding material filling the grooves; forming a passivation layer on a second side of the wafer opposing the first side; and dicing along the grooves from the second side of the wafer to form a plurality of individual semiconductor packages, each of the plurality of individual semiconductor packages including a respective die.

A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.

A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

A die substrate, including a dielectric body, the body having a first body surface, a second body surface on an opposite side and body edge surfaces located in between. Current-carrying metal lines located in the dielectric body. One or more of the metal lines routed to one or more of the body edge surfaces. A termination layer located on the at least one body edge surface and electrically connected to the least one of the metal lines routed to the body edge surfaces. Electrically conductive plating located on the at least one body edge surface. The plating connected to the termination layer for an electrical current connection or a ground connection to the at least one metal line. A method of manufacturing an integrated circuit package, the package and a computer having the die substrate are also disclosed.