A semiconductor structure includes a semiconductor chip, a substrate and a plurality of bump segments. The bump segments include a first group of bump segments and a second group of bump segments collectively extended from an active surface of the semiconductor chip toward the substrate. Each bump segment of the second group of bump segments has a cross-sectional area greater than a cross-sectional area of each bump segment of the first group of bump segments. The first group of bump segments includes a first bump segment and a second bump segment. Each of the first bump segment and the second bump segment includes a tapered side surface exposed to an environment outside the bump segments. A portion of a bottom surface of the second bump segment is stacked on the first bump segment, and another portion of the bottom surface of the second bump segment is exposed to the environment.

A packaging device including bumps and a method of manufacturing the packaging device are presented. In the method of manufacturing a packaging device, a dielectric layer that covers a packaging base is formed and a lower layer is formed over a packaging base including first and second connecting pads. A plurality of dummy bumps that overlaps with the dielectric layer is formed. A sealing pattern that covers the dummy bumps, filling areas between the dummy bumps, is formed. A lower layer pattern in which the plurality of dummy bumps have been disposed is formed by removing portions of the lower layer that are exposed and do not overlap with the sealing pattern.

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

An under bump metallurgy (UBM) and redistribution layer (RDL) routing structure includes an RDL formed over a die. The RDL comprises a first conductive portion and a second conductive portion. The first conductive portion and the second conductive portion are at a same level in the RDL. The first conductive portion of the RDL is separated from the second conductive portion of the RDL by insulating material of the RDL. A UBM layer is formed over the RDL. The UBM layer includes a conductive UBM trace and a conductive UBM pad. The UBM trace electrically couples the first conductive portion of the RDL to the second conductive portion of the RDL. The UBM pad is electrically coupled to the second conductive portion of the RDL. A conductive connector is formed over and electrically coupled to the UBM pad.

A display includes a wiring pad and a dummy pad on a first substrate. A first planarization layer is disposed on the wiring pad and the dummy pad. A first pad electrode layer is connected to the wiring pad and a second pad electrode layer is connected to the dummy pad. The first and second pad electrode layers are disposed on the first planarization layer. A first insulating layer covers the first and second pad electrode layers. A first pad electrode upper layer is disposed on the first pad electrode layer. A second pad electrode upper layer is disposed on the second pad electrode layer. The wiring pad, the first pad electrode layer, and the first pad electrode upper layer are electrically connected. The dummy pad, the second pad electrode layer, and the second pad electrode upper layer are electrically connected.

A method for forming a package structure is provided. The method includes transporting a first package component into a processing chamber. The method includes positioning the first package component on a chuck table. The method includes using the chuck table to heat the first package component. The method includes holding a second package component with a bonding head. The bonding head communicates with a plurality of vacuum devices via a plurality of vacuum tubes, and the vacuum devices each operate independently. The method also includes bonding the first package component and the second package component in the processing chamber to form the package structure.

An electronic device includes a semiconductor die having a semiconductor body, a metallization structure over the semiconductor body, a protective overcoat layer over the metallization structure, a polyimide layer over the protective overcoat layer, a crack arrest structure including contiguous metal crack arrest features in the metallization structure that extend from the protective overcoat layer toward the semiconductor body, conductive terminals that extend from the metallization structure through the protective overcoat layer and the polyimide layer, and a protruded metal feature over the crack arrest structure and at least partially abutting the polyimide layer, and a package structure that at least partially encloses the semiconductor die.

A solder ball attaching apparatus includes a working die, having an internal space maintained in a vacuum state, and a plurality of lifting members installed on the working die to be movable upwardly and downwardly. The working die may be provided with an upper plate on which the lifting members are installed. The upper plate may be provided with an insertion groove, into which an upper end portion of the lifting member is inserted when the lifting member is lowered, and a locking groove into which a lower end portion of the lifting member is inserted when the lifting member is raised. The lifting member may be lowered by a chip when the chip is seated on the lifting member and may be raised by elastic restoring force when the chip is removed.

A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.

Hybrid fanouts for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, at least one edge a first semiconductor die is attached to a molding including through mold vias (TMVs). Conductive traces may be formed on a first side of the first semiconductor die, where the first side includes integrated circuitry coupled to the conductive traces. Moreover, conductive pads may be formed on a surface of the molding, which is coplanar with the first side. The conductive pads are coupled to first ends of the TMVs, where second ends of the TMVs are coupled to bond wires connected to one or more second semiconductor dies that the first semiconductor die carries. Conductive bumps can be formed on the conductive traces and pads such that the first semiconductor die and the molding attached thereto can be directly attached to a printed circuit board.