A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

A method for forming a film, including: atomizing a raw material solution into a mist to form raw material mist; mixing raw material mist and a carrier gas to form gas mixture; placing a substrate on a placement section of susceptor; supplying gas mixture from an atomizer to the substrate to perform film formation by thermal reaction on substrate; and discharging gas mixture after the film formation through an exhaust unit, wherein in the step of supplying the gas mixture from atomizer to substrate to perform film formation by thermal reaction on the substrate, at least a part of gas mixture is supplied from a smooth section adjacent to placement section to a surface of substrate, the smooth section having a surface roughness of 200 m or less. A method for forming a film capable of uniformly and stably producing a high-quality film on a surface of a large-diameter substrate.

A process for producing semiconductor structures comprising one of more layers of Group III/IV Compounds deposited onto a template using PVD sputtering the resulting semiconductor structures is provided according to the invention. The Group III or Group IV material may be gallium, hafnium, indium, aluminum, silicon, germanium, magnesium and/or zirconium. The anion provided by a reactive gas may be nitride, oxide, arsenide, or phosphide. The flow of the reactive gas to the vacuum chamber used to react with the sputtered Group III or Group IV target material for produce the Group III/IV Compound layer onto the template is modulated during a duty cycle during the PVD sputtering process between a target-rich condition and a reactive gas-rich condition to enhance the efficiency of the PVD sputtering process and improve the crystallinity of the Group III/IV Compound layer within the resulting semiconductor structure.

Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle of more than 0, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.

A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of -Ga.sub.2O.sub.3 or an -Ga.sub.2O.sub.3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 m. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 m or greater and 64 m or less.

A method for growing a III-V material may include forming at least one layer on a stack including a crystalline layer made of III-V material, a first masking layer surmounting the germination layer, the first masking layer having at least one first opening; depositing a second masking layer covering an upper face of the sacrificial layer; forming at least one second opening in the second masking layer; removing the sacrificial layer selectively at the first masking layer and at the second masking layer; epitaxially growing a material made of the III-V material from the germination layer; forming al least one third opening in the second masking layer; and epitaxially growing at least one material made of the III-V material from the first epitaxial layer.

A preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer is provided. The preparation method includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.

A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.

A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The anneal is conducted at or above a decomposition temperature for the semiconductor layer.

Bulk relaxed Wurtzite In-containing III-nitride layers having a smooth and substantially pit-free surface morphology and an interface region having a substantially relaxed in-plane a-lattice parameter and characterized by a single-phase gallium-polar (0001) orientation are disclosed. Methods of making the bulk relaxed Wurtzite In-containing III-nitride layers using MOCVD growth conditions are also disclosed. Semiconductor structures include epitaxial layers grown on a bulk relaxed Wurtzite In-containing III-nitride layer. The semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and display applications.